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Ku and Ka-band Gallium Nitride Monolithic Integrated Circuits on Silicon Substrates

For the first time in Russia, the Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences (IUHFSE, RAS) developed, manufactured, and investigated three types of monolithic integrated circuits for the Ku and Ka-bands based on gallium nitride heterostructures o...

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Bibliographic Details
Published in:Russian microelectronics 2021-05, Vol.50 (3), p.155-160
Main Authors: Fedorov, Yu. V., Bugaev, A. S., Gamkrelidze, S. A., Gnatyuk, D. L., Matveenko, O. S., Pavlov, A. Yu, Galiev, R. R., Zuev, A. V., Maitama, M. V., Shavruk, N. V., Tomosh, K. N.
Format: Article
Language:English
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Summary:For the first time in Russia, the Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences (IUHFSE, RAS) developed, manufactured, and investigated three types of monolithic integrated circuits for the Ku and Ka-bands based on gallium nitride heterostructures on silicon substrates with a diameter of 100 mm. The measured microwave characteristics of the obtained microcircuits are presented.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739721030045