From gradual change to abrupt change in Ni-Al layered double hydroxide memristor by adsorbed small molecule oxadiazole

[Display omitted] •The memristor based on Ni-Al LDHs was investigated.•Memristors characteristic could be modulated by adsorbing oxadiazole.•From gradual change to abrupt change in resistive switching was realized.•Rectification characteristic of memristor was manifested. The memristor based on Ni-A...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2021-06, Vol.323, p.112671, Article 112671
Main Authors: Ai, Ruibo, Zu, Ningning, Li, Rui
Format: Article
Language:English
Subjects:
Adsorption
Aluminum
Composite materials
Materials science
Memristors
Molecules
Nanocomposites
Ni-Al LDHs
Nickel
Nonvolatile memory
Oxadiazole
Oxadiazoles
Resistive switching
Superplasticity
Switching
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Summary:[Display omitted] •The memristor based on Ni-Al LDHs was investigated.•Memristors characteristic could be modulated by adsorbing oxadiazole.•From gradual change to abrupt change in resistive switching was realized.•Rectification characteristic of memristor was manifested. The memristor based on Ni-Al layered double hydroxide (Ni-Al LDHs) was investigated. The memristor be composed of oxadiazole-adsorbing Ni-Al LDHs composite active layer was researched. Experimental results show that memristors characteristic could be modulated by adsorbing oxadiazole with Ni-Al LDHs in active layer from gradual change to abrupt changes in resistive switching. While, Ni-Al LDHs devices show gradual current changes, and its synaptic plasticity and spike-time-dependent plasticity in Hebbian learning has been investigated; the device with adsorbed oxadiazole small molecules undergoes abrupt changes. This study shows the potential of nanocomposites that adsorb electrically active small molecules to modify the resistive switching characteristics of memristors and paves the way for the design of nanocomposite memristors for use in advanced devices.
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2021.112671