Design optimization of CdTe/Si tandem solar cell using different transparent conducting oxides as interconnecting layers

•TCOs are used as the interconnecting layers in the simulation of CdTe/Si tandem solar cell using wxAMPS software.•Current matching between the top and the bottom cells is done by varying the thickness of the CdTe absorber layer.•The best possible efficiency of 38.0417% is obtained by reducing the p...

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Bibliographic Details
Published in:Journal of alloys and compounds 2021-07, Vol.870, p.159351, Article 159351
Main Authors: Isah, M., Rahman, K.S., Doroody, C., Harif, M.N., Rosly, H.N., Sopian, K., Tiong, S.K., Amin, N.
Format: Article
Language:English
Subjects:
Cadmium telluride
Design optimization
Efficiency
Indium tin oxides
Interconnecting layers
Numerical simulation
Photovoltaic cells
Silicon
Solar cells
Tandem solar cell
Thickness
Tin dioxide
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Summary:•TCOs are used as the interconnecting layers in the simulation of CdTe/Si tandem solar cell using wxAMPS software.•Current matching between the top and the bottom cells is done by varying the thickness of the CdTe absorber layer.•The best possible efficiency of 38.0417% is obtained by reducing the p-CdTe layer thickness from 1 µm to 0.2 µm.•With proper design optimization, CdTe/Si tandem solar cell can push the efficiency beyond the existing single junction limit. Due to the efficiency limit placed by Shockley-Queisser for the single junction solar cells, interest has now shifted to the design and fabrication of cost-effective and more efficient multijunction or tandem solar cells. In this study, wxAMPS 3.0 numerical simulation software has been used in designing and optimizing a CdTe/Si based tandem solar cell structure utilizing some selected transparent conducting oxides (TCOs) as electrical and optical interconnectors. Among the three TCOs (SnO2, ITO and AZO) used here, AZO at a thickness of 20 nm illustrated the best efficiency of 26.7156% with Voc = 2.1261 V, Jsc = 13.8071 mA/cm2 and FF = 0.9100 when the thickness of CdTe and Si layers were fixed at 1 µm and 300 µm, respectively. The best possible efficiency for the design was obtained at 38.0417% by reducing the p-CdTe layer thickness from 1 µm to 0.2 µm. This shows that, with proper design and optimized fabrication process, CdTe/Si tandem can push the efficiency beyond the existing single junction limit.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2021.159351