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Enhancing Detectivity of Indium-Oxide-Based Photodetectors via Vertical Nanostructuring Through Glancing Angle Deposition
In 2 O 3 vertical nanostructures (VNS) are fabricated using a glancing angle deposition (GLAD) technique upon an In 2 O 3 thin film (TF) on a n-type silicon (n-Si) substrate. Analysis using high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction (HRXRD) reveale...
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| Published in: | Journal of electronic materials 2021-06, Vol.50 (6), p.3722-3730 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c319t-8b48d24e6f196777d967d9542acf707fd8843a64a2bb3588fd76ca11ac73ae593 |
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| cites | cdi_FETCH-LOGICAL-c319t-8b48d24e6f196777d967d9542acf707fd8843a64a2bb3588fd76ca11ac73ae593 |
| container_end_page | 3730 |
| container_issue | 6 |
| container_start_page | 3722 |
| container_title | Journal of electronic materials |
| container_volume | 50 |
| creator | Nath, Amitabha Mahajan, Bikram Kishore Singh, Laishram Robindro Vishwas, Shubhajit Nanda, Rajib Kumar Sarkar, Mitra Barun |
| description | In
2
O
3
vertical nanostructures (VNS) are fabricated using a glancing angle deposition (GLAD) technique upon an In
2
O
3
thin film (TF) on a n-type silicon (n-Si) substrate. Analysis using high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction (HRXRD) revealed that the In
2
O
3
VNS are amorphous in nature. An average ~4.5-fold enhancement in absorption was observed and a microscopic origin was proposed for observed bandgap changes for the n-Si/In
2
O
3
TF/GLAD In
2
O
3
VNS and bare n-Si/In
2
O
3
TF samples in the visible region due to surface-related trap states or oxygen vacancies. The improvement in photodetection was attributed to the presence of a large number of surface-related trap states at the edge of metal contacts. The fabricated VNS detector possesses enhanced photosensitivity (~1.7-fold) due to an efficient photogating effect in the depletion region. A maximum detectivity of ~12.8 × 10
7
Jones was observed for the n-Si/In
2
O
3
TF/GLAD In
2
O
3
VNS device, which possesses ~15.6-fold enhanced detectivity as compared to the bare n-Si/In
2
O
3
TF device.
Graphic Abstract |
| doi_str_mv | 10.1007/s11664-021-08889-6 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2529017744</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2529017744</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-8b48d24e6f196777d967d9542acf707fd8843a64a2bb3588fd76ca11ac73ae593</originalsourceid><addsrcrecordid>eNp9kE1PAyEQhonRxFr9A5428YwyCwvs0c9qYqyHarwRCmxLU5cKbGP_vdvWxJuXmcv7PpN5EDoHcgmEiKsEwDnDpARMpJQ15gdoABWjGCT_OEQDQjngqqTVMTpJaUEIVCBhgDb37Vy3xrez4s5lZ7Jf-7wpQlM8tdZ3n3j87a3DNzo5W7zOQw52FwsxFWuvi3cXszd6WbzoNqQcO5O7uKVN5jF0s3kxWv7ir9vZ0vVHViH57EN7io4avUzu7HcP0dvD_eT2ET-PR0-318_YUKgzllMmbckcb6DmQgjbT1tXrNSmEUQ0VkpGNWe6nE5pJWVjBTcaQBtBtatqOkQXe-4qhq_OpawWoYttf1KVVVkTEIKxPlXuUyaGlKJr1Cr6Tx03CojaKlZ7xapXrHaKFe9LdF9Kq-3PLv6h_2n9ALDsgOo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2529017744</pqid></control><display><type>article</type><title>Enhancing Detectivity of Indium-Oxide-Based Photodetectors via Vertical Nanostructuring Through Glancing Angle Deposition</title><source>Springer Nature</source><creator>Nath, Amitabha ; Mahajan, Bikram Kishore ; Singh, Laishram Robindro ; Vishwas, Shubhajit ; Nanda, Rajib Kumar ; Sarkar, Mitra Barun</creator><creatorcontrib>Nath, Amitabha ; Mahajan, Bikram Kishore ; Singh, Laishram Robindro ; Vishwas, Shubhajit ; Nanda, Rajib Kumar ; Sarkar, Mitra Barun</creatorcontrib><description>In
2
O
3
vertical nanostructures (VNS) are fabricated using a glancing angle deposition (GLAD) technique upon an In
2
O
3
thin film (TF) on a n-type silicon (n-Si) substrate. Analysis using high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction (HRXRD) revealed that the In
2
O
3
VNS are amorphous in nature. An average ~4.5-fold enhancement in absorption was observed and a microscopic origin was proposed for observed bandgap changes for the n-Si/In
2
O
3
TF/GLAD In
2
O
3
VNS and bare n-Si/In
2
O
3
TF samples in the visible region due to surface-related trap states or oxygen vacancies. The improvement in photodetection was attributed to the presence of a large number of surface-related trap states at the edge of metal contacts. The fabricated VNS detector possesses enhanced photosensitivity (~1.7-fold) due to an efficient photogating effect in the depletion region. A maximum detectivity of ~12.8 × 10
7
Jones was observed for the n-Si/In
2
O
3
TF/GLAD In
2
O
3
VNS device, which possesses ~15.6-fold enhanced detectivity as compared to the bare n-Si/In
2
O
3
TF device.
Graphic Abstract</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-021-08889-6</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Depletion ; Deposition ; Electronics and Microelectronics ; High resolution ; High resolution electron microscopy ; Indium ; Indium oxides ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Original Research Article ; Photosensitivity ; Silicon substrates ; Solid State Physics ; Thin films ; Transmission electron microscopy</subject><ispartof>Journal of electronic materials, 2021-06, Vol.50 (6), p.3722-3730</ispartof><rights>The Minerals, Metals & Materials Society 2021</rights><rights>The Minerals, Metals & Materials Society 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-8b48d24e6f196777d967d9542acf707fd8843a64a2bb3588fd76ca11ac73ae593</citedby><cites>FETCH-LOGICAL-c319t-8b48d24e6f196777d967d9542acf707fd8843a64a2bb3588fd76ca11ac73ae593</cites><orcidid>0000-0002-0862-8148 ; 0000-0002-0874-7382 ; 0000-0002-4590-7955 ; 0000-0002-4434-4521</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Nath, Amitabha</creatorcontrib><creatorcontrib>Mahajan, Bikram Kishore</creatorcontrib><creatorcontrib>Singh, Laishram Robindro</creatorcontrib><creatorcontrib>Vishwas, Shubhajit</creatorcontrib><creatorcontrib>Nanda, Rajib Kumar</creatorcontrib><creatorcontrib>Sarkar, Mitra Barun</creatorcontrib><title>Enhancing Detectivity of Indium-Oxide-Based Photodetectors via Vertical Nanostructuring Through Glancing Angle Deposition</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>In
2
O
3
vertical nanostructures (VNS) are fabricated using a glancing angle deposition (GLAD) technique upon an In
2
O
3
thin film (TF) on a n-type silicon (n-Si) substrate. Analysis using high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction (HRXRD) revealed that the In
2
O
3
VNS are amorphous in nature. An average ~4.5-fold enhancement in absorption was observed and a microscopic origin was proposed for observed bandgap changes for the n-Si/In
2
O
3
TF/GLAD In
2
O
3
VNS and bare n-Si/In
2
O
3
TF samples in the visible region due to surface-related trap states or oxygen vacancies. The improvement in photodetection was attributed to the presence of a large number of surface-related trap states at the edge of metal contacts. The fabricated VNS detector possesses enhanced photosensitivity (~1.7-fold) due to an efficient photogating effect in the depletion region. A maximum detectivity of ~12.8 × 10
7
Jones was observed for the n-Si/In
2
O
3
TF/GLAD In
2
O
3
VNS device, which possesses ~15.6-fold enhanced detectivity as compared to the bare n-Si/In
2
O
3
TF device.
Graphic Abstract</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Depletion</subject><subject>Deposition</subject><subject>Electronics and Microelectronics</subject><subject>High resolution</subject><subject>High resolution electron microscopy</subject><subject>Indium</subject><subject>Indium oxides</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Original Research Article</subject><subject>Photosensitivity</subject><subject>Silicon substrates</subject><subject>Solid State Physics</subject><subject>Thin films</subject><subject>Transmission electron microscopy</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kE1PAyEQhonRxFr9A5428YwyCwvs0c9qYqyHarwRCmxLU5cKbGP_vdvWxJuXmcv7PpN5EDoHcgmEiKsEwDnDpARMpJQ15gdoABWjGCT_OEQDQjngqqTVMTpJaUEIVCBhgDb37Vy3xrez4s5lZ7Jf-7wpQlM8tdZ3n3j87a3DNzo5W7zOQw52FwsxFWuvi3cXszd6WbzoNqQcO5O7uKVN5jF0s3kxWv7ir9vZ0vVHViH57EN7io4avUzu7HcP0dvD_eT2ET-PR0-318_YUKgzllMmbckcb6DmQgjbT1tXrNSmEUQ0VkpGNWe6nE5pJWVjBTcaQBtBtatqOkQXe-4qhq_OpawWoYttf1KVVVkTEIKxPlXuUyaGlKJr1Cr6Tx03CojaKlZ7xapXrHaKFe9LdF9Kq-3PLv6h_2n9ALDsgOo</recordid><startdate>20210601</startdate><enddate>20210601</enddate><creator>Nath, Amitabha</creator><creator>Mahajan, Bikram Kishore</creator><creator>Singh, Laishram Robindro</creator><creator>Vishwas, Shubhajit</creator><creator>Nanda, Rajib Kumar</creator><creator>Sarkar, Mitra Barun</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0002-0862-8148</orcidid><orcidid>https://orcid.org/0000-0002-0874-7382</orcidid><orcidid>https://orcid.org/0000-0002-4590-7955</orcidid><orcidid>https://orcid.org/0000-0002-4434-4521</orcidid></search><sort><creationdate>20210601</creationdate><title>Enhancing Detectivity of Indium-Oxide-Based Photodetectors via Vertical Nanostructuring Through Glancing Angle Deposition</title><author>Nath, Amitabha ; Mahajan, Bikram Kishore ; Singh, Laishram Robindro ; Vishwas, Shubhajit ; Nanda, Rajib Kumar ; Sarkar, Mitra Barun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-8b48d24e6f196777d967d9542acf707fd8843a64a2bb3588fd76ca11ac73ae593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Depletion</topic><topic>Deposition</topic><topic>Electronics and Microelectronics</topic><topic>High resolution</topic><topic>High resolution electron microscopy</topic><topic>Indium</topic><topic>Indium oxides</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Original Research Article</topic><topic>Photosensitivity</topic><topic>Silicon substrates</topic><topic>Solid State Physics</topic><topic>Thin films</topic><topic>Transmission electron microscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nath, Amitabha</creatorcontrib><creatorcontrib>Mahajan, Bikram Kishore</creatorcontrib><creatorcontrib>Singh, Laishram Robindro</creatorcontrib><creatorcontrib>Vishwas, Shubhajit</creatorcontrib><creatorcontrib>Nanda, Rajib Kumar</creatorcontrib><creatorcontrib>Sarkar, Mitra Barun</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nath, Amitabha</au><au>Mahajan, Bikram Kishore</au><au>Singh, Laishram Robindro</au><au>Vishwas, Shubhajit</au><au>Nanda, Rajib Kumar</au><au>Sarkar, Mitra Barun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancing Detectivity of Indium-Oxide-Based Photodetectors via Vertical Nanostructuring Through Glancing Angle Deposition</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2021-06-01</date><risdate>2021</risdate><volume>50</volume><issue>6</issue><spage>3722</spage><epage>3730</epage><pages>3722-3730</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>In
2
O
3
vertical nanostructures (VNS) are fabricated using a glancing angle deposition (GLAD) technique upon an In
2
O
3
thin film (TF) on a n-type silicon (n-Si) substrate. Analysis using high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction (HRXRD) revealed that the In
2
O
3
VNS are amorphous in nature. An average ~4.5-fold enhancement in absorption was observed and a microscopic origin was proposed for observed bandgap changes for the n-Si/In
2
O
3
TF/GLAD In
2
O
3
VNS and bare n-Si/In
2
O
3
TF samples in the visible region due to surface-related trap states or oxygen vacancies. The improvement in photodetection was attributed to the presence of a large number of surface-related trap states at the edge of metal contacts. The fabricated VNS detector possesses enhanced photosensitivity (~1.7-fold) due to an efficient photogating effect in the depletion region. A maximum detectivity of ~12.8 × 10
7
Jones was observed for the n-Si/In
2
O
3
TF/GLAD In
2
O
3
VNS device, which possesses ~15.6-fold enhanced detectivity as compared to the bare n-Si/In
2
O
3
TF device.
Graphic Abstract</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-021-08889-6</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-0862-8148</orcidid><orcidid>https://orcid.org/0000-0002-0874-7382</orcidid><orcidid>https://orcid.org/0000-0002-4590-7955</orcidid><orcidid>https://orcid.org/0000-0002-4434-4521</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 2021-06, Vol.50 (6), p.3722-3730 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_proquest_journals_2529017744 |
| source | Springer Nature |
| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Depletion Deposition Electronics and Microelectronics High resolution High resolution electron microscopy Indium Indium oxides Instrumentation Materials Science Optical and Electronic Materials Original Research Article Photosensitivity Silicon substrates Solid State Physics Thin films Transmission electron microscopy |
| title | Enhancing Detectivity of Indium-Oxide-Based Photodetectors via Vertical Nanostructuring Through Glancing Angle Deposition |
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