Improved Compact Modeling of SiGe HBT Linearity With MEXTRAM

We compare measured and simulated RF third-order distortion current, as well as the corresponding IP3, as a function of bias, for a SiGe heterojunction bipolar transistor (HBT), using MEXTRAM. The collector-base (CB) depletion capacitance model is identified to limit IP3 modeling accuracy near its p...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2021-06, Vol.68 (6), p.2597-2603
Main Authors: Zhang, Huaiyuan, Niu, Guofu, Willemsen, Marnix B., Scholten, Andries J.
Format: Article
Language:English
Subjects:
Capacitance
Current measurement
Depletion
Frequency measurement
Heterojunction bipolar transistors
linearity
Model accuracy
Modelling
Radio frequency
Semiconductor devices
SiGe heterojunction bipolar transistor (HBT)
Silicon germanides
Silicon germanium
Voltage measurement
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Summary:We compare measured and simulated RF third-order distortion current, as well as the corresponding IP3, as a function of bias, for a SiGe heterojunction bipolar transistor (HBT), using MEXTRAM. The collector-base (CB) depletion capacitance model is identified to limit IP3 modeling accuracy near its peak. New CB capacitance modeling options are developed to significantly improve high-current IP3 modeling accuracy, particularly its peak behavior. Guidelines to simultaneous fitting of {f}_{T} , {f}_{\text {max}} , IP3, and {C}_{\text {BC}} are developed.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3070530