Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

We report 60-nm gate-length graded-channel AlGaN/GaN HEMTs fabricated with a mini-field-plate T-gate. The devices exhibit an extrinsic f T and \text{f}_{\text {MAX}} of 156 GHz and 308 GHz, respectively. At 60-nm gate length, the f T *Lg of 9.4 GHz \ast \mu \text{m} is comparable to that of conve...

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Bibliographic Details
Published in:IEEE electron device letters 2021-06, Vol.42 (6), p.796-799
Main Authors: Moon, Jeong-Sun, Grabar, Bob, Wong, Joel, Chuong, Dao, Arkun, Erdem, Morales, Didiel Vazquez, Chen, Peter, Malek, Christopher, Fanning, David, Venkatesan, Nivedhita, Fay, Patrick
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
Computer architecture
Density measurement
FET
Gallium nitrides
GaN
graded-channel
HEMT
HEMTs
High electron mobility transistors
Logic gates
millimeter-wave
MODFETs
power
Power system measurements
speed
Wide band gap semiconductors
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Summary:We report 60-nm gate-length graded-channel AlGaN/GaN HEMTs fabricated with a mini-field-plate T-gate. The devices exhibit an extrinsic f T and \text{f}_{\text {MAX}} of 156 GHz and 308 GHz, respectively. At 60-nm gate length, the f T *Lg of 9.4 GHz \ast \mu \text{m} is comparable to that of conventional scaled short gate-length AlGaN/GaN HEMTs. Due to minimal current collapse, the graded-channel GaN HEMTs demonstrated linear RF power scaling up to 5.5 W/mm at 30 GHz. This results in a record \text{f}_{\text {T}}~\ast power density product of 858 GHz \ast \text{W} /mm for Ga-polar GaN devices, indicating the promise of this device architecture for mmW amplifiers.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2021.3075926