Non-polar true-lateral GaN power diodes on foreign substrates

We have demonstrated non-polar GaN power diodes (Schottky barrier diode and p–n junction diode) on foreign substrates featuring the true-lateral p–n and metal–semiconductor junctions. The diodes were fabricated on GaN islands laterally overgrown on the mask-patterned sapphire and Si substrates by me...

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Bibliographic Details
Published in:Applied physics letters 2021-05, Vol.118 (21)
Main Authors: Wang, Jia, Yu, Guo, Zong, Hua, Liao, Yaqiang, Lu, Weifang, Cai, Wentao, Hu, Xiaodong, Xie, Ya-Hong, Amano, Hiroshi
Format: Article
Language:English
Subjects:
Applied physics
Avalanche diodes
Computer architecture
Diodes
Electric fields
Electrical junctions
Gallium nitrides
Junction diodes
Metalorganic chemical vapor deposition
P-n junctions
Sapphire
Schottky diodes
Semiconductor junctions
Silicon substrates
Vapor phase epitaxy
Vapor phases
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Summary:We have demonstrated non-polar GaN power diodes (Schottky barrier diode and p–n junction diode) on foreign substrates featuring the true-lateral p–n and metal–semiconductor junctions. The diodes were fabricated on GaN islands laterally overgrown on the mask-patterned sapphire and Si substrates by metalorganic vapor phase epitaxy. The anode and cathode were formed on the opposed a-plane sidewalls of the island, making the device architecture essentially like the 90° rotation of the desired true-vertical power diodes. The ideality factor of the Schottky barrier diode remained 1.0 (from 1.00 to 1.05) over 7 decades in current. Specifically, a high critical electric field of 3.3 MV/cm was demonstrated on the p–n junction diode with avalanche capability. These performances reveal a strong potential of non-polar GaN with the true-lateral junctions for high power applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0051552