A transient ionizing radiation SPICE model for PDSOI MOSFET

In this paper, a transient ionizing radiation SPICE model for PDSOI MOSFET is proposed for the simulation of the rail‐span collapse. It is based on the present understanding of transient ionizing radiation effects. The model accounts for the generation and collection of radiation induced transient p...

Full description

Saved in:
Bibliographic Details
Published in:Microwave and optical technology letters 2021-08, Vol.63 (8), p.2103-2107
Main Authors: Gao, Libo, Du, Chuanhua, Bu, Jianhui, Li, Jiangjiang, Ma, Quangang, Zhao, Fazhan, Zeng, Chao, Gao, Jiantou, Li, Duoli, Zeng, Chuanbin, Han, Zhengsheng, Luo, Jiajun
Format: Article
Language:English
Subjects:
Current sources
Dosage
Ionizing radiation
MOSFETs
PDSOI
photocurrent
Photoelectric effect
Photoelectric emission
Radiation
Radiation effects
Simulation
SPICE model
Transient current
transient ionizing radiation
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, a transient ionizing radiation SPICE model for PDSOI MOSFET is proposed for the simulation of the rail‐span collapse. It is based on the present understanding of transient ionizing radiation effects. The model accounts for the generation and collection of radiation induced transient photocurrent, the influence of the device geometry, and the bias conditions. Verilog‐A behavioral modeling language is utilized to implement the physically based models of the transient current sources, eliminating the use of independent current sources and lumped SPICE element models. The model is validated by comparison with the Sentaurus TCAD simulation results. The comparison of simulation and experimental results of the 64K SRAM fabricated by the 0.13 μm PDSOI technology validates the effectiveness of the dose rate model.
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.32317