Ferromagnetic insulating behavior at low temperature induced by Sn doping in the ceramic SrRuO3

Effects of Sn doping at Ru site on the structural, magnetic, and transport behavior of polycrystalline SrRu1−xSnxO3 (x ≤ 0.1) have been investigated here. Substitution of Sn4+ for Ru4+ remains the same crystal symmetry with that of Sn‐free SrRuO3, while induces the Ru(Sn)O6 octahedral distortions. S...

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Published in:Journal of the American Ceramic Society 2021-08, Vol.104 (8), p.4086-4094
Main Authors: Liu, Yanliang, Zhang, Zhe, Lv, Jiecheng, Qian, Peihua, Cai, Hongling, Wu, Xiaoshan
Format: Article
Language:English
Subjects:
Dilution
Doping
electrical properties
Ferromagnetism
High temperature
Low temperature
magnetic materials/properties
Magnetic moments
Magnetic properties
oxides
Transition temperature
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creator Liu, Yanliang
Zhang, Zhe
Lv, Jiecheng
Qian, Peihua
Cai, Hongling
Wu, Xiaoshan
description Effects of Sn doping at Ru site on the structural, magnetic, and transport behavior of polycrystalline SrRu1−xSnxO3 (x ≤ 0.1) have been investigated here. Substitution of Sn4+ for Ru4+ remains the same crystal symmetry with that of Sn‐free SrRuO3, while induces the Ru(Sn)O6 octahedral distortions. Samples with the low doping concentration (x ≤ 0.08) show a metallic behavior at high temperature, while a metal to insulator transition occurs at low temperature. On the other hand, an insulator behavior is detected for sample with x = 0.1, which follows Arrhenius‐type process in the temperature range of 80–140 K and Mott's variable range hopping model in the temperature range of 140–300 K. Further, we find that Sn4+ has a significant effect on the magnetic behavior of Sn doping in SrRuO3 where ferromagnetic transition temperature and magnetic moment decrease rapidly due to octahedral distortion and site dilution.
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Substitution of Sn4+ for Ru4+ remains the same crystal symmetry with that of Sn‐free SrRuO3, while induces the Ru(Sn)O6 octahedral distortions. Samples with the low doping concentration (x ≤ 0.08) show a metallic behavior at high temperature, while a metal to insulator transition occurs at low temperature. On the other hand, an insulator behavior is detected for sample with x = 0.1, which follows Arrhenius‐type process in the temperature range of 80–140 K and Mott's variable range hopping model in the temperature range of 140–300 K. 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subjects Dilution
Doping
electrical properties
Ferromagnetism
High temperature
Low temperature
magnetic materials/properties
Magnetic moments
Magnetic properties
oxides
Transition temperature
title Ferromagnetic insulating behavior at low temperature induced by Sn doping in the ceramic SrRuO3
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