A Novel Multilevel Nonvolatile Solar‐Blind Deep Ultraviolet Photoelectric Memory Based on an Organic Field Effect Transistor

• Published in: Advanced optical materials 2021-06, Vol.9 (11), p.n/a
• Main Authors: Zhao, Xue, Wei, Shi‐Yu, Wang, Xiao‐Hong, Qiu, Long‐Zhen
• Format: Article
• Language: English
• Subjects: deep ultraviolet; Electric potential; Field effect transistors; Image processing; Luminous intensity; Materials science; Multilevel; multilevel memory; Optical memory (data storage); Optics; organic field effect transistors; photoelectric monitor; Photoelectricity; phototransistors; Selectivity; Semiconductor devices; Transistors; Voltage
• ISSN: 2195-1071; 2195-1071
• DOI: 10.1002/adom.202002256

Deep ultraviolet (DUV) light monitoring has a wide range of applications in areas such as military surveillance, biological/medical analysis, and flame detection. In this paper, a novel nonvolatile solar‐blind DUV photoelectric memory is investigated based on an organic field effect transistor (OFET). It has 16 different optical memory states of multilevel memory behavior and rewriting capability. The memory window of the device reaches to 23.8 V under a gate voltage of −40 V and 254 nm (DUV) illumination (1.252 mW cm–2). Moreover, the device has a retention time of over 104 s, more than 100 cycles of writing/reading/erasing/reading (W/R/E/R), and an ION/IOFF ratio of about 102. The memory behavior can be modulated via the gate voltage, light intensity, and exposure time. In addition, determination of the exposure dose to DUV light is achieved. The memory shows a highly selectivity, which is sensitive to 254 nm DUV. Furthermore, a DUV memory array is fabricated, and the image processing and storage capabilities are verified. This novel device shows a promising path toward highly (wavelength) selective and advanced multilevel solar‐blind DUV monitors. A novel solar‐blind deep ultraviolet light monitor is prepared by an organic field effect transistor, enabling multilevel memory of 16 optical states. The unique working mechanism makes the memory independent of the narrow bandgap of organic semiconductors, and provides a new potential implementation strategy for dose monitoring of highly selective deep ultraviolet (DUV) light.