Effect of Micron-scale Photoluminescence Variation on Droop Measurements in InGaN/GaN Quantum Wells

Micro-photoluminescence maps reveal micron-scale spatial variation in intensity, peak emission energy and bandwidth across InGaN/GaN quantum wells. To investigate the effect of this spatial variation on measurements of the dependence of emission efficiency on carrier density, excitation power-depend...

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Bibliographic Details
Published in:Journal of physics. Conference series 2021-05, Vol.1919 (1), p.12011
Main Authors: Barrett, R M, Ahumada-Lazo, R, Alanis, J A, Parkinson, P, Church, S A, Kappers, M J, Oliver, R A, Binks, D J
Format: Article
Language:English
Subjects:
Carrier density
Diameters
Emission analysis
Indium gallium nitrides
Photoluminescence
Physics
Quantum wells
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Summary:Micro-photoluminescence maps reveal micron-scale spatial variation in intensity, peak emission energy and bandwidth across InGaN/GaN quantum wells. To investigate the effect of this spatial variation on measurements of the dependence of emission efficiency on carrier density, excitation power-dependent emission was collected from a bright and dark region on each of blue-and green emitting samples. The onset of efficiency droop was found to occur at a greater carrier density in the dark regions than in the bright, by factors of 1.2 and 1.8 in the blue and green-emitting samples, respectively. By spatially integrating the emission from progressively larger areas, it is also shown that collection areas greater than ∼50 μm in diameter are required to reduce the intensity variation to less than 10%.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1919/1/012011