Excitonic Emission in Atomically Thin Electroluminescent Devices

2D layered materials derived from their bulk counterparts are intriguing platforms for the exploration of novel optoelectronic applications and fundamental physical phenomena. Among the 2D family, 2D semiconductors with sizable bandgaps, such as transitional metal dichalcogenides and black phosphoru...

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Bibliographic Details
Published in:Laser & photonics reviews 2021-06, Vol.15 (6), p.n/a
Main Authors: Fu, Qiang, Hu, Zhenliang, Zhou, Mengfan, Lu, Junpeng, Ni, Zhenhua
Format: Article
Language:English
Subjects:
2D materials
Dynamic structural analysis
Electroluminescence
Emission
excitons
Layered materials
light‐emitting diodes
Optical properties
Optoelectronics
Photoelectricity
Quantum confinement
quantum efficiency
Semiconductors
transition metal dichalcogenides
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Summary:2D layered materials derived from their bulk counterparts are intriguing platforms for the exploration of novel optoelectronic applications and fundamental physical phenomena. Among the 2D family, 2D semiconductors with sizable bandgaps, such as transitional metal dichalcogenides and black phosphorus, are promising building blocks for next‐generation light‐emitting applications due to their extraordinary optical and photoelectrical properties. Originating from the combined effect of quantum confinement and reduced dielectric screening, the excitonic effect is dominant in ultrathin 2D semiconductors and of essential importance for the performance of 2D light‐emitting diodes (2DLEDs). Herein, a systematic summary and review is presented, where excitonic properties and the main influencing factors, including Coulomb interactions, band structures, carrier dynamics, and external electrical fields, are first analyzed. The recent progress of 2DLEDs as well as their excitonic emission features and electroluminescence manipulation are then introduced. Lastly, the ongoing challenges and future prospects of 2DLEDs are discussed. The last decade has witnessed unprecedented advances in the optoelectronic applications of 2D semiconductors. This short review provides an overview on the recent progress of 2D semiconductor‐based light‐emitting devices and their electroluminescence mechanisms. Exciton dynamics and device geometry that may tremendously impact the overall performance of these light‐emitting devices are also discussed. General ideals on quantum efficiency enhancement and luminescence manipulation are given.
ISSN:1863-8880
1863-8899
DOI:10.1002/lpor.202000587