Electrical Properties of Ultra-Thin Body (111) Ge-On-Insulator n-Channel MOSFETs Fabricated by Smart-Cut Process

We have systematically examined electrical characteristics of ultra-thin body (UTB) (111) Ge-on-insulator (GOI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) fabricated by the smart-cut process and have compared their electrical properties with those of (100) ones. The (111...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2021, Vol.9, p.612-617
Main Authors: Lim, Cheol-Min, Zhao, Ziqiang, Sumita, Kei, Toprasertpong, Kasidit, Takenaka, Mitsuru, Takagi, Shinichi
Format: Article
Language:English
Subjects:
Degradation
Electrical properties
Electron mobility
Field effect transistors
Ge-on-insulator (GOI)
Germanium
Interface states
Logic gates
Metal oxide semiconductors
MOSFET
MOSFETs
Rough surfaces
Semiconductor devices
smart-cut technology
surface orientation
Surface roughness
Thickness
Thin bodies
ultra-thin body (UTB)
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Summary:We have systematically examined electrical characteristics of ultra-thin body (UTB) (111) Ge-on-insulator (GOI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) fabricated by the smart-cut process and have compared their electrical properties with those of (100) ones. The (111) GOI thickness was varied from 29.4 to 7.3 nm. The normal MOSFET operation of a 7.3 nm-thick (111)-oriented GOI nMOSFET has been demonstrated with a reasonable ON/OFF ratio of 10 4 . However, degradation in the effective electron mobility and subthreshold swing (SS) of the (111) GOI nMOSFETs with decreasing the GOI thickness ( \text{T}_{\mathrm{ GOI}} ) was observed. Raman analyses and electrical characteristics of GOI nMOSFET under back-gate operation has suggested that a high interface state density at (111) GOI/buried oxide interfaces as well as low GOI film quality near the back interfaces can be an origin of this degradation of the electrical properties with thin body channels.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2021.3085981