Comparative Analysis of FINFETS and MOSFETS

This paper makes a brief introduction of CMOS technology and illustrates the structure of traditional MOSFETs and Fin-FETs and their developing process. To help better understand advantages and drawbacks of both two technologies, it also explains the Drain Induced Barrier Lowering (DIBL) effect and...

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Bibliographic Details
Published in:Journal of physics. Conference series 2021-06, Vol.1887 (1), p.12033
Main Author: Shao, Chen
Format: Article
Language:English
Subjects:
CMOS
Field effect transistors
MOSFETs
Physics
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Summary:This paper makes a brief introduction of CMOS technology and illustrates the structure of traditional MOSFETs and Fin-FETs and their developing process. To help better understand advantages and drawbacks of both two technologies, it also explains the Drain Induced Barrier Lowering (DIBL) effect and its impact on transistor performance. The paper compares the DIBL ratio of Double-Gate Fin-FETs and Double-Gate MOSFETs by varying channel length using Fin-FET and MOSFET in similar structural parameters. The results are shown in different diagrams, which proves that Fin-FETs have a better control of DIBL effect than conventional MOSFETs. In the end it explains the shortcomings of the experiment and describes future expectations for Fin-FET technology.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1887/1/012033