Spectral emission dependence of tin-vacancy centers in diamond from thermal processing and chemical functionalization

We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occ...

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Bibliographic Details
Published in:arXiv.org 2021-06
Main Authors: Corte, Emilio, Sachero, Selene, Tchernij, Sviatoslav Ditalia, Lühmann, Tobias, Pezzagna, Sébastien, Traina, Paolo, Degiovanni, Ivo Pietro, Moreva, Ekaterina, Olivero, Paolo, Meijer, Jan, Genovese, Marco, neris, Jacopo
Format: Article
Language:English
Subjects:
Defect annealing
Diamonds
Emission analysis
Emitters
Ion implantation
Line spectra
Optical properties
Oxidation
Photoluminescence
Spectral emission
Spectral emittance
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Summary:We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative occurrence of the three spectral features can be modified by oxidizing the sample surface following thermal annealing. We finally report the relevant emission properties of each class of individual emitters, including the excited state emission lifetime and the emission intensity saturation parameters.
ISSN:2331-8422
DOI:10.48550/arxiv.2106.07365