Enhanced ferroelectric properties in Aurivillius PbxBi6−xFe0.5Co0.5Ti4O18 thin films prepared by chemical solution deposition

The Aurivillius compound Pb x Bi 6− x Fe 0.5 Co 0.5 Ti 4 O 18 thin films were prepared via chemical solution deposition method and the influence of Pb 2+ ions doping on the structure, ferroelectric and leakage properties were studied. With the increasing concentration of Pb 2+ ions, the lattice dist...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2021-06, Vol.32 (11), p.14274-14285
Main Authors: Gao, Qianqian, Dai, Yuqiang, Wei, Xile, Zhou, Changping, Gong, Wenfeng, Song, Haixiang, Guo, Zhanhu, Li, Chengbo
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Current density
Deposition
Distortion
Doping
Ferroelectric materials
Ferroelectricity
Lattice vacancies
Leakage current
Materials Science
Optical and Electronic Materials
Residual stress
Thin films
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The Aurivillius compound Pb x Bi 6− x Fe 0.5 Co 0.5 Ti 4 O 18 thin films were prepared via chemical solution deposition method and the influence of Pb 2+ ions doping on the structure, ferroelectric and leakage properties were studied. With the increasing concentration of Pb 2+ ions, the lattice distortion is increased and the growth of the films along ab plane is promoted. The calculation results show that the internal stress of the films increases with the increase of Pb 2+ concentration. For the samples with low Pb 2+ doping concentration ( x  
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-021-05991-7