Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

We report the metal-organic chemical vapor deposition growth of high-quality AlN on sapphire enabled by an alternating V/III ratio AlN superlattice. We demonstrated that the insertion of an alternating V/III ratio AlN superlattice facilitates the relaxation of tensile stress during growth and assist...

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Bibliographic Details
Published in:Applied physics letters 2021-06, Vol.118 (26)
Main Authors: Tang, Bin, Wan, Zehong, Hu, Hongpo, Gong, Liyan, Zhou, Shengjun
Format: Article
Language:English
Subjects:
Applied physics
Metalorganic chemical vapor deposition
Organic chemicals
Organic chemistry
Sapphire
Stress relaxation
Substrates
Superlattices
Tensile stress
Thick films
Threading dislocations
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Summary:We report the metal-organic chemical vapor deposition growth of high-quality AlN on sapphire enabled by an alternating V/III ratio AlN superlattice. We demonstrated that the insertion of an alternating V/III ratio AlN superlattice facilitates the relaxation of tensile stress during growth and assists the annihilation of threading dislocations. Dislocation inclination was proposed to play a major role in the stress relaxation and dislocation reduction, which not only provides an effective misfit-dislocation component but also increases the dislocation reaction probability. By this method, crack-free 3.25 μm-thick AlN films were grown on flat sapphire substrate (FSS) and nano-patterned sapphire substrate (NPSS) at 1180 °C, and the full width at half maximum of (002)/(102) rocking curves was 204/408 and 152/323 arcsec for such AlN/FSS and AlN/NPSS templates.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0048656