Effect of time relaxations on the carrier heating of InAs/GaAs quantum dot semiconductor optical amplifier

Carrier temperature in InAs quantum dot (QD) optical amplifiers has been formalized theoretically by using the double‐excited states system. High current injection gives high carrier temperature and a punch in the curve appears at low current due to the ground state carrier contribution. Increasing...

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Bibliographic Details
Published in:Microwave and optical technology letters 2021-09, Vol.63 (9), p.2231-2236
Main Authors: Flayyih, Ahmed H., Mohammed, Firas S., Al‐Khursan, Amin H.
Format: Article
Language:English
Subjects:
Current carriers
Current injection
Heating
Indium arsenides
Light amplifiers
Low currents
quantum dot
Quantum dots
Recovery time
reservoir carrier temperature
semiconductor optical amplifier
Semiconductor optical amplifiers
Wetting
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Summary:Carrier temperature in InAs quantum dot (QD) optical amplifiers has been formalized theoretically by using the double‐excited states system. High current injection gives high carrier temperature and a punch in the curve appears at low current due to the ground state carrier contribution. Increasing carrier‐heating time increased carrier temperature. It is shown the slow relaxation for both the wetting layer to QD and the interdot relaxations are given high carrier temperature. Pulses with wide full width at half‐maximum give high carrier temperature since its recovery time is increased. Free carrier absorption gives a main contribution to the heat in the QD structure.
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.32254