Loading…

Improvements on the Carrier-Based Control Method for a Three-Level T-Type, Quasi-Impedance-Source Inverter

The boost feature that characterizes Z-source and quasi-Z-source converters is usually achieved by means of a proper insertion of short-circuit states in the full DC-link. In this work, a novel pulse width modulation carrier-based strategy for a three-phase, three-level T-type, quasi-Z-source invert...

Full description

Saved in:
Bibliographic Details
Published in:Electronics (Basel) 2019-06, Vol.8 (6), p.677
Main Authors: Barrero-González, Fermín, Roncero-Clemente, Carlos, Milanés-Montero, María Isabel, González-Romera, Eva, Romero-Cadaval, Enrique, Husev, Oleksandr, Pires, V. Fernão
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The boost feature that characterizes Z-source and quasi-Z-source converters is usually achieved by means of a proper insertion of short-circuit states in the full DC-link. In this work, a novel pulse width modulation carrier-based strategy for a three-phase, three-level T-type, quasi-Z-source inverter is introduced, based on the addition of alternate short-circuits in the two halves of the DC-link bus. This technique achieves better performance, less electromagnetic interference, and lower harmonic distortion of the output line-to-line voltage compared to the traditional methods based on the full DC-link shoot-through. At the same time, generating the switching states is to easy implement. The proposed strategy permits the use of electronic devices with lower blocking voltage capability, thus improving converter reliability, size, and cost. The new method may be implemented in another multilevel inverter with an impedance-source network as well. A comprehensive simulation study is performed in order to validate the adopted method, with different inverter input voltages, which is taken as representative of a photovoltaic array. Comparisons are conducted with conventional strategy insertions using the same topology in order to show the improvements achieved.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics8060677