Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen technology for the design is a 100 nm gate length HEMT provided by OMMIC foundry. Both small-signal and noise models had been previously extracted by the means of an extensive measurement campaign, a...

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Bibliographic Details
Published in:Electronics (Basel) 2020-01, Vol.9 (1), p.150
Main Authors: Pace, Lorenzo, Colangeli, Sergio, Ciccognani, Walter, Longhi, Patrick Ettore, Limiti, Ernesto, Leblanc, Remy, Feudale, Marziale, Vitobello, Fabio
Format: Article
Language:English
Subjects:
Amplifiers
Circuits
Design specifications
Extremely high frequencies
Gallium nitrides
Noise
Silicon
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Summary:In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen technology for the design is a 100 nm gate length HEMT provided by OMMIC foundry. Both small-signal and noise models had been previously extracted by the means of an extensive measurement campaign, and were then employed in the design of the presented LNA. The amplifier presents an average noise figure of 2.4 dB, a 30 dB average gain value, and input/output matching higher than 10 dB in the whole 34–37.5 Ghz design band, while non-linear measurements testify a minimum output 1 dB compression point of 23 dBm in the specific 35–36.5 GHz target band. This shows the suitability of the chosen technology for low-noise applications.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics9010150