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Significantly enhanced energy storage properties of Nd3+ doped AgNbO3 lead-free antiferroelectric ceramics
•A Wr of 4.6 J/cm3 under 430 kV/cm and η of 62.5% are achieved in Ag0.97Nd0.01NbO3.•Ag0.97Nd0.01NbO3 ceramics demonstrate excellent temperature stability from 25 ℃ up to 125 ℃.•Outstanding power density of 54.0 MW/cm3 and ultrafast discharge speed (t0.9) of 59.2 ns were also obtained. Lead-free diel...
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Published in: | Journal of alloys and compounds 2021-10, Vol.877, p.160162, Article 160162 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | •A Wr of 4.6 J/cm3 under 430 kV/cm and η of 62.5% are achieved in Ag0.97Nd0.01NbO3.•Ag0.97Nd0.01NbO3 ceramics demonstrate excellent temperature stability from 25 ℃ up to 125 ℃.•Outstanding power density of 54.0 MW/cm3 and ultrafast discharge speed (t0.9) of 59.2 ns were also obtained.
Lead-free dielectric capacitors for energy storage device have attracted increasing attention recently because of their high-power density and superior temperature stability. In this work, Nd-doped silver niobate (AgNbO3, abbreviated as AN) lead-free antiferroelectric ceramics were prepared by utilizing traditional solid state reaction method. A large energy storage density of 4.6 J/cm3 and an efficiency of 62.5% were simultaneously obtained in the 1% Nd-doped AN sample with an outstanding power density of 54.0 MW/cm3 and an ultrafast discharge speed (t0.9) of 59.2 ns. Additionally, the 1% Nd-doped AN ceramic demonstrates a good temperature stability from 25 ℃ to 130 ℃. The excellent energy storage properties of the 1% Nd-doped ceramic is ascribed to the enhanced breakdown electric field induced by grain size engineering and the construction of phase structure via heterovalent substitution at the A-site of the lattice structure at room temperature. Our present work suggests that the 1% Nd-doped AN ceramic show promise for energy storage application in miniaturized mobile electronic devices and high-power equipment. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2021.160162 |