Enhanced performance of solar cell with n+ emitter by SiO2 nanospheres assisted liquid phosphorus diffusion

•SiO2 nanospheres were used for more uniform phosphorus diffusion.•An enhancement of minority carrier lifetime from 42 μs to 56 μs was obtained.•A small square resistance of 22 Ω/sq was made at high phosphoric acid concentration.•The efficiency in the cell center was enhanced by 40.54% using the nan...

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Bibliographic Details
Published in:Solar energy 2021-07, Vol.222, p.230-234
Main Authors: Lai, Binkang, Shen, Honglie, Hu, Dongli, Gu, Hao, Huo, Xiaomin, Xu, Yajun
Format: Article
Language:English
Subjects:
Annealing
Conductivity
Crystal structure
Diffusion uniformity, sheet resistance
Emitters
Energy gap
Lattice vacancies
N+ emitter
Nanospheres
Oxygen atoms
Phosphorus
Photoresponse
Photosensitivity
Photovoltaic cells
Photovoltaics
Silicon dioxide
SiO2 nanospheres
Solar cells
Solar energy
Spin-on doping
Sulfur
Temperature
Thin films
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Summary:•SiO2 nanospheres were used for more uniform phosphorus diffusion.•An enhancement of minority carrier lifetime from 42 μs to 56 μs was obtained.•A small square resistance of 22 Ω/sq was made at high phosphoric acid concentration.•The efficiency in the cell center was enhanced by 40.54% using the nanospheres. In order to improve the quality of n+ emitter fabricated by phosphorus doping, SiO2 nanospheres were added into a phosphoric acid solution for spin-on doping. Through a complete analysis of the trade-off between the diffusion uniformity and sheet resistance, the particle size of SiO2 nanospheres is selected to be 230 nm. It is found that with the increase of phosphoric acid concentration from 50% to 85%, the average sheet resistance decreases from 128.5 Ω/sq to 18.1 Ω/sq, and the diffusion uniformity increased from 95.2% to 98.5%. In a large concentration range, the surface doping concentration of the emitter will increase with phosphoric acid, but when the concentration of phosphoric acid reaches 80%, the surface doping concentration will be almost unchanged. Nevertheless, different from above, the p-n junction depth has little dependence on the phosphoric acid concentration. Moreover, the efficiencies in the solar cell center and edge are enhanced by 40.54% and 88.08% respectively using SiO2 nanospheres assisted diffusion.
ISSN:0038-092X
1471-1257
DOI:10.1016/j.solener.2021.05.008