Sintering, microstructure, and properties of a new microwave dielectric BaNi2V2O8 ceramic

• Published in: Journal of materials science. Materials in electronics 2021-07, Vol.32 (13), p.17946-17952
• Main Authors: Deng, Guangwen, Qing, Zhenjun, Cheng, Jiawen, Wang, Jin, Zhao, Yun, Li, Haiyan
• Format: Article
• Language: English
• Subjects: Ceramics; Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystal structure; Crystallinity; Densification; Density; Dielectric properties; Materials Science; Microstructure; Optical and Electronic Materials; Sintering; Solid phases
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-021-06333-3

The solid-phase reaction method was adopted to prepare BaNi 2 V 2 O 8 ceramic with high relative density. The influences of the sintering process on the densification, microstructure, microwave dielectric properties, growth of grains, and composition of crystalline phase were analyzed in this article. In particular, the microwave dielectric properties of BaNi 2 V 2 O 8 ceramic should be first reported by us. The microstructures and crystalline phase of BaNi 2 V 2 O 8 ceramic were analyzed using a scanning electron microscope and X-ray diffractometer. BaNi 2 V 2 O 8 with rhombohedral structure and space group of R-3 was observed as the only crystalline phase. The ceramic that achieved the best sintering densification was considered to be a sample sintered at 950 °C for 4 h as seen from the results of microstructure and relative density. The relative density was considered to be the key factor to determine the ε r and Q × f value. Variation of the sintering process had little effect on the τ f values. The BaNi 2 V 2 O 8 sample fired at 950 °C for 4 h showed a low ε r value of 11.71, an excellent Q × f value of 48,350 GHz, and a relatively negative τ f value of − 49.2 ppm/°C.