Enhanced UV-visible photo responsivity of annealed Al/porous silicon (PS): p-Si Schottky device

•Fabrication of Al/porous silicon (PS): p-Si Schottky photodetector (PD) has been achieved.•Pyroelectric effect degrades device photo sensing performance.•Thermal annealing treatment improves UV–visible sensing performance of the Schottky PD. Present article reports improvement of UV-visible photo s...

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Bibliographic Details
Published in:Materials letters 2021-08, Vol.297, p.129972, Article 129972
Main Authors: Sarmah, S., Das, M., Sarkar, D.
Format: Article
Language:English
Subjects:
Aluminum
Annealing
Dark current
Interfaces
Materials science
Optical materials and properties
Porous materials
Porous silicon
Sensors
Surfaces
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Summary:•Fabrication of Al/porous silicon (PS): p-Si Schottky photodetector (PD) has been achieved.•Pyroelectric effect degrades device photo sensing performance.•Thermal annealing treatment improves UV–visible sensing performance of the Schottky PD. Present article reports improvement of UV-visible photo sensing property of porous silicon (PS): p-Si Schottky device by thermal annealing of the electrochemically etched PS: p-Si structure aged for a month. This structure is provided with a rectifying Schottky contact of vacuum coated aluminum (Al) metal. The annealed device at 400 °C shows better diode quality and exhibits multi-band UV-visible photo response with maximum photo- to dark current ratio (PDCR) in low applied bias range of -1.8 to 0 V, suggesting low power operation feasibility of the device. For comparison, the results on the device annealed at 200 °C are also presented.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2021.129972