Construction of NiSe2/BiVO4 Schottky junction derived from work function discrepancy for boosting photocatalytic activity

•A series of BiVO4 samples composited with NiSe2 nanosheets were prepared through a facile solvothermal method.•The photocatalytic degradation rate of RhB of the optimized sample reaches 11 times higher than that of pure BiVO4.•The Schottky junction derived from the discrepancy of work function acce...

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Bibliographic Details
Published in:Journal of alloys and compounds 2021-09, Vol.875, p.160071, Article 160071
Main Authors: Shen, Shijie, Zhang, Huanhuan, Xu, Aijiao, Zhao, YuYi, Lin, Zhiping, Wang, Zongpeng, Zhong, Wenwu, Feng, Shangshen
Format: Article
Language:English
Subjects:
Bismuth oxides
BiVO4
Catalytic activity
Co-catalyst
Electric fields
NiSe2
Photocatalysis
Photodegradation
Schottky junction
Vanadates
Work functions
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Summary:•A series of BiVO4 samples composited with NiSe2 nanosheets were prepared through a facile solvothermal method.•The photocatalytic degradation rate of RhB of the optimized sample reaches 11 times higher than that of pure BiVO4.•The Schottky junction derived from the discrepancy of work function accelerates the separation of photogenerated carriers.•The interaction at the interface reduces the band gap of BiVO4. The rapid recombination of photogenerated carriers limits the photocatalytic activity of BiVO4. Here, we grew NiSe2 nanosheets on the surface of BiVO4 through a facile solvothermal method to construct a Schottky junction. Due to the discrepancy of work function, electrons at the interface are transferred from BiVO4 to NiSe2, thereby forming a built-in electric field. In virtue of the built-in electric field and the good conductivity of NiSe2, the photo-generated carriers can be quickly separated and transferred. In addition, the interaction at the interface reduces the band gap of BiVO4, which increases the absorption of visible light. These above benefits improve the photocatalytic performance. The photocatalytic reaction under visible light shows that the degradation rate of RhB for 9 mol% NiSe2 composited BiVO4 increases by 11 times compared with pure BiVO4. The simplicity of the preparation method and the significantly improved performance show the enormous potential of NiSe2 to be coupled with other semiconductor photocatalysts to improve their catalytic activity.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2021.160071