Excitonic Luminescence Spectra and Electrical Transport Properties of Photosensitive CdSe Layers Grown on Mica in a Quasi-Closed System

— CdSe layers having high photosensitivity (photocurrent to dark current ratio of 6.2 × 10 4 ) and an extremely low carrier concentration (9 × 10 11 cm –3 ) have been grown on muscovite mica by thermal evaporation in a quasi-closed system. These results are of interest for producing materials for po...

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Bibliographic Details
Published in:Inorganic materials 2021-07, Vol.57 (7), p.669-673
Main Authors: Chukita, V. I., Senokosov, E. A., Surinov, V. G., Odin, I. N., Chukichev, M. V., Feshchenko, V. S.
Format: Article
Language:English
Subjects:
Cadmium selenide
Cadmium selenides
Carrier density
Cathodoluminescence
Chemistry
Chemistry and Materials Science
Dark current
Excitation spectra
Excitons
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Materials Science
Mica
Muscovite
Photoelectric effect
Photoelectric emission
Photosensitivity
Position sensing
Transport properties
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Summary:— CdSe layers having high photosensitivity (photocurrent to dark current ratio of 6.2 × 10 4 ) and an extremely low carrier concentration (9 × 10 11 cm –3 ) have been grown on muscovite mica by thermal evaporation in a quasi-closed system. These results are of interest for producing materials for position-sensitive semiconductor photodetectors based on CdSe layers. We have demonstrated that the 78-K cathodoluminescence spectra of the cadmium selenide layers grown at 853 K have a single line, corresponding to radiative annihilation of free A -excitons. The spectra of the layers grown at 833 K show a line of free A -excitons and its first phonon replica.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168521070037