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Excitonic Luminescence Spectra and Electrical Transport Properties of Photosensitive CdSe Layers Grown on Mica in a Quasi-Closed System
— CdSe layers having high photosensitivity (photocurrent to dark current ratio of 6.2 × 10 4 ) and an extremely low carrier concentration (9 × 10 11 cm –3 ) have been grown on muscovite mica by thermal evaporation in a quasi-closed system. These results are of interest for producing materials for po...
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Published in: | Inorganic materials 2021-07, Vol.57 (7), p.669-673 |
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container_end_page | 673 |
container_issue | 7 |
container_start_page | 669 |
container_title | Inorganic materials |
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creator | Chukita, V. I. Senokosov, E. A. Surinov, V. G. Odin, I. N. Chukichev, M. V. Feshchenko, V. S. |
description | —
CdSe layers having high photosensitivity (photocurrent to dark current ratio of 6.2 × 10
4
) and an extremely low carrier concentration (9 × 10
11
cm
–3
) have been grown on muscovite mica by thermal evaporation in a quasi-closed system. These results are of interest for producing materials for position-sensitive semiconductor photodetectors based on CdSe layers. We have demonstrated that the 78-K cathodoluminescence spectra of the cadmium selenide layers grown at 853 K have a single line, corresponding to radiative annihilation of free
A
-excitons. The spectra of the layers grown at 833 K show a line of free
A
-excitons and its first phonon replica. |
doi_str_mv | 10.1134/S0020168521070037 |
format | article |
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CdSe layers having high photosensitivity (photocurrent to dark current ratio of 6.2 × 10
4
) and an extremely low carrier concentration (9 × 10
11
cm
–3
) have been grown on muscovite mica by thermal evaporation in a quasi-closed system. These results are of interest for producing materials for position-sensitive semiconductor photodetectors based on CdSe layers. We have demonstrated that the 78-K cathodoluminescence spectra of the cadmium selenide layers grown at 853 K have a single line, corresponding to radiative annihilation of free
A
-excitons. The spectra of the layers grown at 833 K show a line of free
A
-excitons and its first phonon replica.</description><identifier>ISSN: 0020-1685</identifier><identifier>EISSN: 1608-3172</identifier><identifier>DOI: 10.1134/S0020168521070037</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Cadmium selenide ; Cadmium selenides ; Carrier density ; Cathodoluminescence ; Chemistry ; Chemistry and Materials Science ; Dark current ; Excitation spectra ; Excitons ; Industrial Chemistry/Chemical Engineering ; Inorganic Chemistry ; Materials Science ; Mica ; Muscovite ; Photoelectric effect ; Photoelectric emission ; Photosensitivity ; Position sensing ; Transport properties</subject><ispartof>Inorganic materials, 2021-07, Vol.57 (7), p.669-673</ispartof><rights>Pleiades Publishing, Ltd. 2021. ISSN 0020-1685, Inorganic Materials, 2021, Vol. 57, No. 7, pp. 669–673. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Neorganicheskie Materialy, 2021, Vol. 57, No. 7, pp. 700–704.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c268t-f5e67512e9275c8d2ebfacff7286e522cfb5a9e19ad21f71cbae9c884da498f13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Chukita, V. I.</creatorcontrib><creatorcontrib>Senokosov, E. A.</creatorcontrib><creatorcontrib>Surinov, V. G.</creatorcontrib><creatorcontrib>Odin, I. N.</creatorcontrib><creatorcontrib>Chukichev, M. V.</creatorcontrib><creatorcontrib>Feshchenko, V. S.</creatorcontrib><title>Excitonic Luminescence Spectra and Electrical Transport Properties of Photosensitive CdSe Layers Grown on Mica in a Quasi-Closed System</title><title>Inorganic materials</title><addtitle>Inorg Mater</addtitle><description>—
CdSe layers having high photosensitivity (photocurrent to dark current ratio of 6.2 × 10
4
) and an extremely low carrier concentration (9 × 10
11
cm
–3
) have been grown on muscovite mica by thermal evaporation in a quasi-closed system. These results are of interest for producing materials for position-sensitive semiconductor photodetectors based on CdSe layers. We have demonstrated that the 78-K cathodoluminescence spectra of the cadmium selenide layers grown at 853 K have a single line, corresponding to radiative annihilation of free
A
-excitons. The spectra of the layers grown at 833 K show a line of free
A
-excitons and its first phonon replica.</description><subject>Cadmium selenide</subject><subject>Cadmium selenides</subject><subject>Carrier density</subject><subject>Cathodoluminescence</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Dark current</subject><subject>Excitation spectra</subject><subject>Excitons</subject><subject>Industrial Chemistry/Chemical Engineering</subject><subject>Inorganic Chemistry</subject><subject>Materials Science</subject><subject>Mica</subject><subject>Muscovite</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Photosensitivity</subject><subject>Position sensing</subject><subject>Transport properties</subject><issn>0020-1685</issn><issn>1608-3172</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kM1KAzEUhYMoWKsP4O6C69Ek08xkllLqD1SstK6HNHOjKW0yJqnaJ_C1naGCC3F1D5zznQuHkHNGLxnLR1dzSjllhRSc0ZLSvDwgA1ZQmeWs5Idk0NtZ7x-TkxhXlNKRkNWAfE0-tU3eWQ3T7cY6jBqdRpi3qFNQoFwDk3WvrVZrWATlYutDglnwLYZkMYI3MHv1yUd00Sb7jjBu5ghTtcMQ4Tb4DwfewUPXANaBgqetijYbrzuigfkuJtyckiOj1hHPfu6QPN9MFuO7bPp4ez--nmaaFzJlRmBRCsax4qXQsuG4NEobU3JZoOBcm6VQFbJKNZyZkumlwkpLOWrUqJKG5UNyse9tg3_bYkz1ym-D617WXIi8X6ukXYrtUzr4GAOaug12o8KuZrTu967_7N0xfM_ELuteMPw2_w99A-jsg-c</recordid><startdate>20210701</startdate><enddate>20210701</enddate><creator>Chukita, V. I.</creator><creator>Senokosov, E. A.</creator><creator>Surinov, V. G.</creator><creator>Odin, I. N.</creator><creator>Chukichev, M. V.</creator><creator>Feshchenko, V. S.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20210701</creationdate><title>Excitonic Luminescence Spectra and Electrical Transport Properties of Photosensitive CdSe Layers Grown on Mica in a Quasi-Closed System</title><author>Chukita, V. I. ; Senokosov, E. A. ; Surinov, V. G. ; Odin, I. N. ; Chukichev, M. V. ; Feshchenko, V. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c268t-f5e67512e9275c8d2ebfacff7286e522cfb5a9e19ad21f71cbae9c884da498f13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Cadmium selenide</topic><topic>Cadmium selenides</topic><topic>Carrier density</topic><topic>Cathodoluminescence</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Dark current</topic><topic>Excitation spectra</topic><topic>Excitons</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Inorganic Chemistry</topic><topic>Materials Science</topic><topic>Mica</topic><topic>Muscovite</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Photosensitivity</topic><topic>Position sensing</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chukita, V. I.</creatorcontrib><creatorcontrib>Senokosov, E. A.</creatorcontrib><creatorcontrib>Surinov, V. G.</creatorcontrib><creatorcontrib>Odin, I. N.</creatorcontrib><creatorcontrib>Chukichev, M. V.</creatorcontrib><creatorcontrib>Feshchenko, V. S.</creatorcontrib><collection>CrossRef</collection><jtitle>Inorganic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chukita, V. I.</au><au>Senokosov, E. A.</au><au>Surinov, V. G.</au><au>Odin, I. N.</au><au>Chukichev, M. V.</au><au>Feshchenko, V. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Excitonic Luminescence Spectra and Electrical Transport Properties of Photosensitive CdSe Layers Grown on Mica in a Quasi-Closed System</atitle><jtitle>Inorganic materials</jtitle><stitle>Inorg Mater</stitle><date>2021-07-01</date><risdate>2021</risdate><volume>57</volume><issue>7</issue><spage>669</spage><epage>673</epage><pages>669-673</pages><issn>0020-1685</issn><eissn>1608-3172</eissn><abstract>—
CdSe layers having high photosensitivity (photocurrent to dark current ratio of 6.2 × 10
4
) and an extremely low carrier concentration (9 × 10
11
cm
–3
) have been grown on muscovite mica by thermal evaporation in a quasi-closed system. These results are of interest for producing materials for position-sensitive semiconductor photodetectors based on CdSe layers. We have demonstrated that the 78-K cathodoluminescence spectra of the cadmium selenide layers grown at 853 K have a single line, corresponding to radiative annihilation of free
A
-excitons. The spectra of the layers grown at 833 K show a line of free
A
-excitons and its first phonon replica.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S0020168521070037</doi><tpages>5</tpages></addata></record> |
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language | eng |
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source | Springer Nature |
subjects | Cadmium selenide Cadmium selenides Carrier density Cathodoluminescence Chemistry Chemistry and Materials Science Dark current Excitation spectra Excitons Industrial Chemistry/Chemical Engineering Inorganic Chemistry Materials Science Mica Muscovite Photoelectric effect Photoelectric emission Photosensitivity Position sensing Transport properties |
title | Excitonic Luminescence Spectra and Electrical Transport Properties of Photosensitive CdSe Layers Grown on Mica in a Quasi-Closed System |
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