Tin-manganese-nickel oxide thin films prepared by thermal evaporation for photosensor applications

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2021-06, Vol.268, p.115126, Article 115126
• Main Authors: Kuo, Chia-Tung, Chu, Yu-Ying, Chen, Han-Yi, Yew, Tri-Rung
• Format: Article
• Language: English
• Subjects: Absorptivity; Evaporation; Indium tin oxides; Manganese; Metal oxides; Nickel; Photosensors; Sandwich-structure device; Silicon substrates; Sn-Mn-Ni oxide thin film; Thin films; Tin; Tin-manganese-nickel oxide
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2021.115126

•The Sn37Mn10Ni53Ox thin films exhibit a high absorption coefficient of 1.15 × 106cm−1in visible light spectrum.•The p+-Si-substrate/Sn-Mn-Ni-oxide-thin-film/indium-tin-oxide device shows a high responsivity (Rres) under 460 nm, 11.5 A/W light exposure at 1.0 V.•The device reveals fast photo-response with a rise time (tr) of 41.2 ms and a fall time (tf) of41.6 ms.•The Sn37Mn10Ni53Ox thin film is favorable for potential photosensor applications in visible light spectrum. This study reports the synthesis and characterization of non-stoichiometric nanocrystalline Tin-Manganese-Nickel (Sn-Mn-Ni) oxide thin films prepared by thermal evaporation for photosensor applications. The photoconductive characteristics were investigated by fabricating a sandwich-structure device of p+-Si-substrate/Sn-Mn-Ni-oxide-thin-film/indium-tin-oxide (ITO). Results show that Sn37Mn10Ni53Ox thin films exhibit an absorption coefficient of 1.15 × 106cm−1in visible light spectrum. In additions, the device characteristics including a high responsivity (Rres) of 11.5 A/W, and the fast photo-response with a rise time (tr) of 41.2 ms and a fall time (tf) of41.6 ms measured at 1.0 V bias and 460 nm wavelength were obtained. Hence, the Sn37Mn10Ni53Ox thin film is favorable for potential photosensor applications in visible light spectrum.