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Strain dependent structure and anomalous Hall effect in Pt/Tb3Fe5O12/Ga3Gd5O12 heterostructure grown on Y3Al5O12 substrates

•The strain of TbIG/GGG on YAG can be modified by the thickness of GGG buffer.•Compensation temperature of TbIG sensitive to GGG thickness.•The anomalous Hall resistance and the sign reversal temperature increase with rising GGG buffer layer. We systematically investigate the strain-dependent micros...

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Published in:Journal of magnetism and magnetic materials 2021-10, Vol.536, p.168130, Article 168130
Main Authors: Liu, Y.K., Liang, J.M., Wong, H.F., Ng, S.M., Mak, C.L., Leung, C.W.
Format: Article
Language:English
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Summary:•The strain of TbIG/GGG on YAG can be modified by the thickness of GGG buffer.•Compensation temperature of TbIG sensitive to GGG thickness.•The anomalous Hall resistance and the sign reversal temperature increase with rising GGG buffer layer. We systematically investigate the strain-dependent microstructure and anomalous Hall effect in Pt/Tb3Fe5O12 (TbIG) grown on (111)-oriented Y3Al5O12 (YAG) substrates with different thickness of Ga3Gd5O12 (GGG) buffer layer. Structural measurements indicated that the out-of-plane lattice spacing of TbIG layers firstly increased with the rising thickness of GGG (tG) and then decreased, which was attributed to the impact of the buffer layer on strain relaxation of the epitaxial films. A variation of compensation temperature was found at tG about 30 nm. Furthermore, both the anomalous Hall resistance and its sign change temperature increased and then kept constant with increasing tG. Our results indicated that strain played a key role to tune the physical properties of Pt/TbIG/GGG heterostructures, providing a possible approach to tune the spin-orbital coupling in heavy metal/ferromagnetic insulator system by strain engineering.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2021.168130