Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formatio...

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Bibliographic Details
Published in:Electronics (Basel) 2021-07, Vol.10 (14), p.1629
Main Authors: Kim, Hyeon-Joong, Kim, Do-Won, Lee, Won-Yong, Lee, Sin-Hyung, Bae, Jin-Hyuk, Kang, In-Man, Jang, Jaewon
Format: Article
Language:English
Subjects:
Bias
Bonding strength
Dopants
Electrodes
Ethanol
Indium
Oxygen
Semiconductor devices
Semiconductors
Silicon dioxide
Silicon substrates
Sol-gel processes
Spectrum analysis
Stability
Thin film transistors
Thin films
Tin dioxide
Transistors
Vacancies
Zinc oxides
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Summary:In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics10141629