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Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors
In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formatio...
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Published in: | Electronics (Basel) 2021-07, Vol.10 (14), p.1629 |
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description | In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs. |
doi_str_mv | 10.3390/electronics10141629 |
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The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.</description><identifier>ISSN: 2079-9292</identifier><identifier>EISSN: 2079-9292</identifier><identifier>DOI: 10.3390/electronics10141629</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Bias ; Bonding strength ; Dopants ; Electrodes ; Ethanol ; Indium ; Oxygen ; Semiconductor devices ; Semiconductors ; Silicon dioxide ; Silicon substrates ; Sol-gel processes ; Spectrum analysis ; Stability ; Thin film transistors ; Thin films ; Tin dioxide ; Transistors ; Vacancies ; Zinc oxides</subject><ispartof>Electronics (Basel), 2021-07, Vol.10 (14), p.1629</ispartof><rights>2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c322t-609ad98081fc82806e0e6e29bd1def8b32aaea69f9013abd2a9dfbe7238e4b7a3</citedby><cites>FETCH-LOGICAL-c322t-609ad98081fc82806e0e6e29bd1def8b32aaea69f9013abd2a9dfbe7238e4b7a3</cites><orcidid>0000-0003-3217-1309 ; 0000-0003-1908-0015</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/2554494542/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2554494542?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,25753,27924,27925,37012,44590,75126</link.rule.ids></links><search><creatorcontrib>Kim, Hyeon-Joong</creatorcontrib><creatorcontrib>Kim, Do-Won</creatorcontrib><creatorcontrib>Lee, Won-Yong</creatorcontrib><creatorcontrib>Lee, Sin-Hyung</creatorcontrib><creatorcontrib>Bae, Jin-Hyuk</creatorcontrib><creatorcontrib>Kang, In-Man</creatorcontrib><creatorcontrib>Jang, Jaewon</creatorcontrib><title>Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors</title><title>Electronics (Basel)</title><description>In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.</description><subject>Bias</subject><subject>Bonding strength</subject><subject>Dopants</subject><subject>Electrodes</subject><subject>Ethanol</subject><subject>Indium</subject><subject>Oxygen</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Silicon dioxide</subject><subject>Silicon substrates</subject><subject>Sol-gel processes</subject><subject>Spectrum analysis</subject><subject>Stability</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Tin dioxide</subject><subject>Transistors</subject><subject>Vacancies</subject><subject>Zinc oxides</subject><issn>2079-9292</issn><issn>2079-9292</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><recordid>eNptUE1PAjEUbIwmEuQXeGniudqPZWmPiookREzA86bdfdWSZYttIeHmf_Af-ksswYMH32UmefPeZAahS0avhVD0BlqoU_CdqyOjrGAlVyeox-lIEcUVP_3Dz9EgxhXNo5iQgvaQma43we-gwc_wppPbAb5zOuJFChAPoI1rXdpjb_HCt9-fXxNoyUvwdV7nq5kj936TyaKbc7x8dx15dO0aL4PuoovJh3iBzqxuIwx-sY9eHx-W4ycym0-m49sZqQXniZRU6UZJKpmtJZe0BAolcGUa1oCVRnCtQZfKKsqENg3XqrEGRlxIKMxIiz66Ov7NgT62EFO18tvQZcuKD4dFoYphwbNKHFV18DEGsNUmuLUO-4rR6tBn9U-f4gcXCm1k</recordid><startdate>20210708</startdate><enddate>20210708</enddate><creator>Kim, Hyeon-Joong</creator><creator>Kim, Do-Won</creator><creator>Lee, Won-Yong</creator><creator>Lee, Sin-Hyung</creator><creator>Bae, Jin-Hyuk</creator><creator>Kang, In-Man</creator><creator>Jang, Jaewon</creator><general>MDPI AG</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><orcidid>https://orcid.org/0000-0003-3217-1309</orcidid><orcidid>https://orcid.org/0000-0003-1908-0015</orcidid></search><sort><creationdate>20210708</creationdate><title>Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors</title><author>Kim, Hyeon-Joong ; Kim, Do-Won ; Lee, Won-Yong ; Lee, Sin-Hyung ; Bae, Jin-Hyuk ; Kang, In-Man ; Jang, Jaewon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c322t-609ad98081fc82806e0e6e29bd1def8b32aaea69f9013abd2a9dfbe7238e4b7a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Bias</topic><topic>Bonding strength</topic><topic>Dopants</topic><topic>Electrodes</topic><topic>Ethanol</topic><topic>Indium</topic><topic>Oxygen</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>Silicon dioxide</topic><topic>Silicon substrates</topic><topic>Sol-gel processes</topic><topic>Spectrum analysis</topic><topic>Stability</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>Tin dioxide</topic><topic>Transistors</topic><topic>Vacancies</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Hyeon-Joong</creatorcontrib><creatorcontrib>Kim, Do-Won</creatorcontrib><creatorcontrib>Lee, Won-Yong</creatorcontrib><creatorcontrib>Lee, Sin-Hyung</creatorcontrib><creatorcontrib>Bae, Jin-Hyuk</creatorcontrib><creatorcontrib>Kang, In-Man</creatorcontrib><creatorcontrib>Jang, Jaewon</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest advanced technologies & aerospace journals</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content (ProQuest)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><jtitle>Electronics (Basel)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Hyeon-Joong</au><au>Kim, Do-Won</au><au>Lee, Won-Yong</au><au>Lee, Sin-Hyung</au><au>Bae, Jin-Hyuk</au><au>Kang, In-Man</au><au>Jang, Jaewon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors</atitle><jtitle>Electronics (Basel)</jtitle><date>2021-07-08</date><risdate>2021</risdate><volume>10</volume><issue>14</issue><spage>1629</spage><pages>1629-</pages><issn>2079-9292</issn><eissn>2079-9292</eissn><abstract>In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.</abstract><cop>Basel</cop><pub>MDPI AG</pub><doi>10.3390/electronics10141629</doi><orcidid>https://orcid.org/0000-0003-3217-1309</orcidid><orcidid>https://orcid.org/0000-0003-1908-0015</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Bias Bonding strength Dopants Electrodes Ethanol Indium Oxygen Semiconductor devices Semiconductors Silicon dioxide Silicon substrates Sol-gel processes Spectrum analysis Stability Thin film transistors Thin films Tin dioxide Transistors Vacancies Zinc oxides |
title | Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors |
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