The temperature dependence of current–voltage characteristics of V2O5/p-Si heterojunction diode

In this study, the effect of vanadium pentoxide (V 2 O 5 ) material on the electrical properties of Schottky diodes was investigated. The Al metal was evaporated by thermal evaporation method on the matte surface of the p -Si crystal. The V 2 O 5 material of 10 nm thickness was evaporated on the oth...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2021-07, Vol.32 (14), p.18886-18899
Main Author: Deniz, Ali Rıza
Format: Article
Language:English
Subjects:
Aluminum
Capacitance
Characterization and Evaluation of Materials
Chemistry and Materials Science
Current voltage characteristics
Diodes
Electrical properties
Evaporation
Heterojunctions
Materials Science
Mathematical analysis
Optical and Electronic Materials
Parameters
Potential barriers
Room temperature
Schottky diodes
Silicon
Temperature dependence
Vanadium pentoxide
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Summary:In this study, the effect of vanadium pentoxide (V 2 O 5 ) material on the electrical properties of Schottky diodes was investigated. The Al metal was evaporated by thermal evaporation method on the matte surface of the p -Si crystal. The V 2 O 5 material of 10 nm thickness was evaporated on the other surface of the crystal using the same method. Finally, Al metal was evaporated on the V 2 O 5 material by DC sputtering method. Thus, Al/V 2 O 5 / p -Si/Al and reference Al/ p -Si/Al Schottky diodes were obtained. The AFM image and absorption measurement of V 2 O 5 material were taken. The I–V (current–voltage) characteristics of both structures are examined at room temperature and it is determined that the V 2 O 5 material causes improvements in the electrical properties of the diode. The I–V measurements of Al/V 2 O 5 / p -Si/Al diode were analyzed between 100 and 380 K. The ideality factor ( n ), barrier height ( Φ b ) and series resistance ( R s ) values of diode calculated for different temperature values. These measurements showed that the diode parameters vary significantly with temperature. This change is attributed to the inhomogeneous distribution in the potential barrier. Also, the C–V (capacitance–voltage) characteristic of this diode was analyzed at room temperature. The variation of the diode's capacitance and diode parameters depending on the frequency was examined.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-021-06406-3