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The temperature dependence of current–voltage characteristics of V2O5/p-Si heterojunction diode
In this study, the effect of vanadium pentoxide (V 2 O 5 ) material on the electrical properties of Schottky diodes was investigated. The Al metal was evaporated by thermal evaporation method on the matte surface of the p -Si crystal. The V 2 O 5 material of 10 nm thickness was evaporated on the oth...
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| Published in: | Journal of materials science. Materials in electronics 2021-07, Vol.32 (14), p.18886-18899 |
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| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c319t-655db015277995d9102cc4ec8fa423b482a9038dbe90a60d6105f3e6b7f8d1493 |
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| cites | cdi_FETCH-LOGICAL-c319t-655db015277995d9102cc4ec8fa423b482a9038dbe90a60d6105f3e6b7f8d1493 |
| container_end_page | 18899 |
| container_issue | 14 |
| container_start_page | 18886 |
| container_title | Journal of materials science. Materials in electronics |
| container_volume | 32 |
| creator | Deniz, Ali Rıza |
| description | In this study, the effect of vanadium pentoxide (V
2
O
5
) material on the electrical properties of Schottky diodes was investigated. The Al metal was evaporated by thermal evaporation method on the matte surface of the
p
-Si crystal. The V
2
O
5
material of 10 nm thickness was evaporated on the other surface of the crystal using the same method. Finally, Al metal was evaporated on the V
2
O
5
material by DC sputtering method. Thus, Al/V
2
O
5
/
p
-Si/Al and reference Al/
p
-Si/Al Schottky diodes were obtained. The AFM image and absorption measurement of V
2
O
5
material were taken. The
I–V
(current–voltage) characteristics of both structures are examined at room temperature and it is determined that the V
2
O
5
material causes improvements in the electrical properties of the diode. The
I–V
measurements of Al/V
2
O
5
/
p
-Si/Al diode were analyzed between 100 and 380 K. The ideality factor (
n
), barrier height (
Φ
b
) and series resistance (
R
s
) values of diode calculated for different temperature values. These measurements showed that the diode parameters vary significantly with temperature. This change is attributed to the inhomogeneous distribution in the potential barrier. Also, the
C–V
(capacitance–voltage) characteristic of this diode was analyzed at room temperature. The variation of the diode's capacitance and diode parameters depending on the frequency was examined. |
| doi_str_mv | 10.1007/s10854-021-06406-3 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2554501582</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2554501582</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-655db015277995d9102cc4ec8fa423b482a9038dbe90a60d6105f3e6b7f8d1493</originalsourceid><addsrcrecordid>eNp9kMtOwzAQRS0EEqXwA6wisTYd23EeS4R4SZW6oCB2lmNP2lRtEmwHiR3_wB_yJbgEiR2rWcy5dzSHkHMGlwwgn3kGhUwpcEYhSyGj4oBMmMwFTQv-ckgmUMqcppLzY3Li_QYgYqKYEL1cYxJw16PTYXCYWOyxtdgaTLo6MYNz2Iavj8-3bhv0ChOz1k6bgK7xoTF-Dz3zhZz19LFJ1hgX3WZoTWi6NrFNZ_GUHNV66_Hsd07J0-3N8vqezhd3D9dXc2oEKwPNpLQVMMnzvCylLRlwY1I0Ra1TLqr4hi5BFLbCEnQGNmMga4FZldeFZWkppuRi7O1d9zqgD2rTDa6NJxWXMpWxu-CR4iNlXOe9w1r1rtlp964YqL1KNapUUaX6UalEDIkx5CPcrtD9Vf-T-gZkbHfg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2554501582</pqid></control><display><type>article</type><title>The temperature dependence of current–voltage characteristics of V2O5/p-Si heterojunction diode</title><source>Springer Link</source><creator>Deniz, Ali Rıza</creator><creatorcontrib>Deniz, Ali Rıza</creatorcontrib><description>In this study, the effect of vanadium pentoxide (V
2
O
5
) material on the electrical properties of Schottky diodes was investigated. The Al metal was evaporated by thermal evaporation method on the matte surface of the
p
-Si crystal. The V
2
O
5
material of 10 nm thickness was evaporated on the other surface of the crystal using the same method. Finally, Al metal was evaporated on the V
2
O
5
material by DC sputtering method. Thus, Al/V
2
O
5
/
p
-Si/Al and reference Al/
p
-Si/Al Schottky diodes were obtained. The AFM image and absorption measurement of V
2
O
5
material were taken. The
I–V
(current–voltage) characteristics of both structures are examined at room temperature and it is determined that the V
2
O
5
material causes improvements in the electrical properties of the diode. The
I–V
measurements of Al/V
2
O
5
/
p
-Si/Al diode were analyzed between 100 and 380 K. The ideality factor (
n
), barrier height (
Φ
b
) and series resistance (
R
s
) values of diode calculated for different temperature values. These measurements showed that the diode parameters vary significantly with temperature. This change is attributed to the inhomogeneous distribution in the potential barrier. Also, the
C–V
(capacitance–voltage) characteristic of this diode was analyzed at room temperature. The variation of the diode's capacitance and diode parameters depending on the frequency was examined.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-021-06406-3</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Aluminum ; Capacitance ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Current voltage characteristics ; Diodes ; Electrical properties ; Evaporation ; Heterojunctions ; Materials Science ; Mathematical analysis ; Optical and Electronic Materials ; Parameters ; Potential barriers ; Room temperature ; Schottky diodes ; Silicon ; Temperature dependence ; Vanadium pentoxide</subject><ispartof>Journal of materials science. Materials in electronics, 2021-07, Vol.32 (14), p.18886-18899</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-655db015277995d9102cc4ec8fa423b482a9038dbe90a60d6105f3e6b7f8d1493</citedby><cites>FETCH-LOGICAL-c319t-655db015277995d9102cc4ec8fa423b482a9038dbe90a60d6105f3e6b7f8d1493</cites><orcidid>0000-0003-3019-0522</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Deniz, Ali Rıza</creatorcontrib><title>The temperature dependence of current–voltage characteristics of V2O5/p-Si heterojunction diode</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>In this study, the effect of vanadium pentoxide (V
2
O
5
) material on the electrical properties of Schottky diodes was investigated. The Al metal was evaporated by thermal evaporation method on the matte surface of the
p
-Si crystal. The V
2
O
5
material of 10 nm thickness was evaporated on the other surface of the crystal using the same method. Finally, Al metal was evaporated on the V
2
O
5
material by DC sputtering method. Thus, Al/V
2
O
5
/
p
-Si/Al and reference Al/
p
-Si/Al Schottky diodes were obtained. The AFM image and absorption measurement of V
2
O
5
material were taken. The
I–V
(current–voltage) characteristics of both structures are examined at room temperature and it is determined that the V
2
O
5
material causes improvements in the electrical properties of the diode. The
I–V
measurements of Al/V
2
O
5
/
p
-Si/Al diode were analyzed between 100 and 380 K. The ideality factor (
n
), barrier height (
Φ
b
) and series resistance (
R
s
) values of diode calculated for different temperature values. These measurements showed that the diode parameters vary significantly with temperature. This change is attributed to the inhomogeneous distribution in the potential barrier. Also, the
C–V
(capacitance–voltage) characteristic of this diode was analyzed at room temperature. The variation of the diode's capacitance and diode parameters depending on the frequency was examined.</description><subject>Aluminum</subject><subject>Capacitance</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Current voltage characteristics</subject><subject>Diodes</subject><subject>Electrical properties</subject><subject>Evaporation</subject><subject>Heterojunctions</subject><subject>Materials Science</subject><subject>Mathematical analysis</subject><subject>Optical and Electronic Materials</subject><subject>Parameters</subject><subject>Potential barriers</subject><subject>Room temperature</subject><subject>Schottky diodes</subject><subject>Silicon</subject><subject>Temperature dependence</subject><subject>Vanadium pentoxide</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kMtOwzAQRS0EEqXwA6wisTYd23EeS4R4SZW6oCB2lmNP2lRtEmwHiR3_wB_yJbgEiR2rWcy5dzSHkHMGlwwgn3kGhUwpcEYhSyGj4oBMmMwFTQv-ckgmUMqcppLzY3Li_QYgYqKYEL1cYxJw16PTYXCYWOyxtdgaTLo6MYNz2Iavj8-3bhv0ChOz1k6bgK7xoTF-Dz3zhZz19LFJ1hgX3WZoTWi6NrFNZ_GUHNV66_Hsd07J0-3N8vqezhd3D9dXc2oEKwPNpLQVMMnzvCylLRlwY1I0Ra1TLqr4hi5BFLbCEnQGNmMga4FZldeFZWkppuRi7O1d9zqgD2rTDa6NJxWXMpWxu-CR4iNlXOe9w1r1rtlp964YqL1KNapUUaX6UalEDIkx5CPcrtD9Vf-T-gZkbHfg</recordid><startdate>20210701</startdate><enddate>20210701</enddate><creator>Deniz, Ali Rıza</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0003-3019-0522</orcidid></search><sort><creationdate>20210701</creationdate><title>The temperature dependence of current–voltage characteristics of V2O5/p-Si heterojunction diode</title><author>Deniz, Ali Rıza</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-655db015277995d9102cc4ec8fa423b482a9038dbe90a60d6105f3e6b7f8d1493</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Aluminum</topic><topic>Capacitance</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Current voltage characteristics</topic><topic>Diodes</topic><topic>Electrical properties</topic><topic>Evaporation</topic><topic>Heterojunctions</topic><topic>Materials Science</topic><topic>Mathematical analysis</topic><topic>Optical and Electronic Materials</topic><topic>Parameters</topic><topic>Potential barriers</topic><topic>Room temperature</topic><topic>Schottky diodes</topic><topic>Silicon</topic><topic>Temperature dependence</topic><topic>Vanadium pentoxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Deniz, Ali Rıza</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest advanced technologies & aerospace journals</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials science collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Deniz, Ali Rıza</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The temperature dependence of current–voltage characteristics of V2O5/p-Si heterojunction diode</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2021-07-01</date><risdate>2021</risdate><volume>32</volume><issue>14</issue><spage>18886</spage><epage>18899</epage><pages>18886-18899</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>In this study, the effect of vanadium pentoxide (V
2
O
5
) material on the electrical properties of Schottky diodes was investigated. The Al metal was evaporated by thermal evaporation method on the matte surface of the
p
-Si crystal. The V
2
O
5
material of 10 nm thickness was evaporated on the other surface of the crystal using the same method. Finally, Al metal was evaporated on the V
2
O
5
material by DC sputtering method. Thus, Al/V
2
O
5
/
p
-Si/Al and reference Al/
p
-Si/Al Schottky diodes were obtained. The AFM image and absorption measurement of V
2
O
5
material were taken. The
I–V
(current–voltage) characteristics of both structures are examined at room temperature and it is determined that the V
2
O
5
material causes improvements in the electrical properties of the diode. The
I–V
measurements of Al/V
2
O
5
/
p
-Si/Al diode were analyzed between 100 and 380 K. The ideality factor (
n
), barrier height (
Φ
b
) and series resistance (
R
s
) values of diode calculated for different temperature values. These measurements showed that the diode parameters vary significantly with temperature. This change is attributed to the inhomogeneous distribution in the potential barrier. Also, the
C–V
(capacitance–voltage) characteristic of this diode was analyzed at room temperature. The variation of the diode's capacitance and diode parameters depending on the frequency was examined.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-021-06406-3</doi><tpages>14</tpages><orcidid>https://orcid.org/0000-0003-3019-0522</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2021-07, Vol.32 (14), p.18886-18899 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_journals_2554501582 |
| source | Springer Link |
| subjects | Aluminum Capacitance Characterization and Evaluation of Materials Chemistry and Materials Science Current voltage characteristics Diodes Electrical properties Evaporation Heterojunctions Materials Science Mathematical analysis Optical and Electronic Materials Parameters Potential barriers Room temperature Schottky diodes Silicon Temperature dependence Vanadium pentoxide |
| title | The temperature dependence of current–voltage characteristics of V2O5/p-Si heterojunction diode |
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