Impact Ionization Coefficients in (Al x Ga1- x )0.52In0.48P and Al x Ga1- x As Lattice-Matched to GaAs

The impact ionization characteristics of (Al x Ga1- x )0.52In0.48P have been studied comprehensively across the full composition range. Electron and hole impact ionization coefficients ([Formula Omitted] and [Formula Omitted], respectively) have been extracted from avalanche multiplication and exces...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2021-01, Vol.68 (8), p.4045
Main Authors: Lewis, Harry I J, Qiao, Liang, Jeng Shiuh Cheong, Aina N A P Baharuddin, Krysa, Andrey B, Beng Koon Ng, Green, James E, David, John P R
Format: Article
Language:English
Subjects:
Alloy systems
Composition
Conduction bands
Ionization coefficients
Lattice matching
Multiplication
Online Access:Get full text
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Summary:The impact ionization characteristics of (Al x Ga1- x )0.52In0.48P have been studied comprehensively across the full composition range. Electron and hole impact ionization coefficients ([Formula Omitted] and [Formula Omitted], respectively) have been extracted from avalanche multiplication and excess noise data for seven different compositions and compared to those of Al x Ga1- x As. While both [Formula Omitted] and [Formula Omitted] initially decrease gradually with increasing bandgap, a sharp decrease in [Formula Omitted] occurs in (Al x Ga1- x )0.52In0.48P when [Formula Omitted], while [Formula Omitted] decreases only slightly. [Formula Omitted] and [Formula Omitted] decrease minimally with further increases in [Formula Omitted] and the breakdown voltage saturates. This behavior is broadly similar to that seen in Al x Ga1- x As, suggesting that it may be related to the details of the conduction band structure as it becomes increasingly indirect in both alloy systems.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3086800