Features of the formation of non-vertical profiles on the surface of 4H-SiC by the reactive-ion etching

The features of the formation of non-vertical profiles on 4H-SiC by reactive-ion etching (RIE) using various masking coatings are studied. The formation of 4H-SiC mesa structures was carried out using automated airlock reactive-ion etching and plasma etching system "Caroline PE 15" with th...

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Published in:IOP conference series. Materials Science and Engineering 2018-07, Vol.387 (1), p.12068
Main Authors: Serkov, A V, Golubkov, V A, Ilyin, V A, Savchenko, D A
Format: Article
Language:English
Subjects:
Avalanche diodes
Gas mixtures
Inclination angle
Inductively coupled plasma
Photodiodes
Photoresists
Plasma etching
Reactive ion etching
Silicon carbide
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description The features of the formation of non-vertical profiles on 4H-SiC by reactive-ion etching (RIE) using various masking coatings are studied. The formation of 4H-SiC mesa structures was carried out using automated airlock reactive-ion etching and plasma etching system "Caroline PE 15" with the ICP-source of plasma in a gas mixture of SF6, O2 and Ar. Using photoresist AZ4533 as a mask, mesa structures with a wall inclination angle of more than 130° were obtained at the etching rate of 4H-SiC was ∼0.5 μm/min. The developed technology of dry etching can be further used in the preparation of avalanche photodiodes or power electronics devices.
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subjects Avalanche diodes
Gas mixtures
Inclination angle
Inductively coupled plasma
Photodiodes
Photoresists
Plasma etching
Reactive ion etching
Silicon carbide
title Features of the formation of non-vertical profiles on the surface of 4H-SiC by the reactive-ion etching
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