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Hierarchical Sphere-Like ZnO–CuO Grown in a Controlled Boundary Layer for High-Performance H2S Sensing
A highly sensitive sensor for hydrogen sulfide based on a p – n junction between metal-oxide semiconductors is reported herein. Uniform ZnO–CuO hollow spheres were synthesized by a combination of chemical and physical methods. To deposit a uniform ZnO layer, the silicon substrate was tilted from 0°...
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Published in: | Journal of electronic materials 2021-09, Vol.50 (9), p.5168-5176 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A highly sensitive sensor for hydrogen sulfide based on a
p
–
n
junction between metal-oxide semiconductors is reported herein. Uniform ZnO–CuO hollow spheres were synthesized by a combination of chemical and physical methods. To deposit a uniform ZnO layer, the silicon substrate was tilted from 0° to 40° relative to the gas flow direction during the growth process. Next, a low concentration of CuO nanoparticles was decorated onto the ZnO nano/microstructure using physical vapor deposition (PVD). The ZnO–CuO heterojunction sensor showed a remarkable response of 112 at 100 ppm
H
2
S
and 158°C. The response time and recovery time were calculated to be 8 s and 35 s, respectively. The response to H
2
S concentration increases of 100 ppm was as high as 3.5 times compared with ZnO alone. Finally, a sensing mechanism is proposed and discussed. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-021-09005-4 |