Creation of thin superconducting MoCN thin film by cathode sputtering technique as a basic material for functional cryogenic nanoelements

Thin MoCN films were synthesized by a method of cathode sputtering of mosaic Mo-C targets by nitrogen ions at temperature of 800°C on substrates of the oxidized silicon. The temperature dependences of electrical resistance of the films in the range of 4.2-300°K were measured. Volt-ampere characteris...

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2019-12, Vol.699 (1), p.12014
Main Authors: Goncharov, B V, Gurovich, B A, Dementyeva, M M, Prikhodko, K E, Olshansky, E D, Kutuzov, L V
Format: Article
Language:English
Subjects:
Cathode sputtering
Chemical composition
Critical current density
Film thickness
Ion beams
Nitrogen ions
Silicon substrates
Thin films
Volt-ampere characteristics
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Summary:Thin MoCN films were synthesized by a method of cathode sputtering of mosaic Mo-C targets by nitrogen ions at temperature of 800°C on substrates of the oxidized silicon. The temperature dependences of electrical resistance of the films in the range of 4.2-300°K were measured. Volt-ampere characteristics of the films and critical current density vs film thickness were obtained at a temperature of 4.2°K. The microstructure and film-depth chemical composition profiles of thin films were investigated by analytical techniques of the transmission electron microscopy (HRTEM, EELS) on a cross-section samples made by the focused ion beam (FIB). It was established that MoCN thin film at a thickness of 8 nm contained MoC and Mo5N6 layers. The high density of critical current in these films indicated prospects of their application in the field of cryogenic nanotechnologies.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/699/1/012014