Synthesis and charactherization of TiO2 doped SnO2 thin film prepared by sol-gel method

In this work, preparation of titanium dioxide doped with tin oxide, SnO2/TiO2 thin films deposited onto silicon wafer via sol-gel method. Different amount of SnO2 was added (5 ml, 10ml and 15 ml) into parent solution. The obtained films were annealed at different temperature which is 400°C, 500°C an...

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2019-12, Vol.701 (1)
Main Authors: Halin, Dewi Suriyani Che, Razak, Kamrosni Abdul, Azani, Azliza, Abdullah, Mohd Mustafa Al Bakri, Salleh, Mohd Arif Anuar Mohd, Mahmed, Norsuria, Shafee, Nur Syahirah, Ramli, Muhammad Mahyiddin, Azhari, Ayu Wazira, Chobpattana, Varistha
Format: Article
Language:English
Subjects:
Annealing
Atomic force microscopes
Atomic force microscopy
Silicon
Silicon wafers
Sol-gel processes
Thermal expansion
Thin films
Tin dioxide
Tin oxides
Titanium dioxide
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Summary:In this work, preparation of titanium dioxide doped with tin oxide, SnO2/TiO2 thin films deposited onto silicon wafer via sol-gel method. Different amount of SnO2 was added (5 ml, 10ml and 15 ml) into parent solution. The obtained films were annealed at different temperature which is 400°C, 500°C and 600°C for 1 hour. Morphological and surface topography of the SnO2 doped TiO2 thin films were studied using Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). The annealed films shows non-uniform crack due to the mismatch of coefficient of thermal expansion (CTE) between SnO2/TiO2 thin films and silicon wafer.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/701/1/012003