Magnetic and electric field induced resistance change in SrFeO thin film

We have investigated Fe electrode/SrFeO3-x stacking layer as resistance random access memory which is called next generation non-volatile memory. In this stacking system, positive magnetoresistance (MR) due to exchange coupling between Fe electrode and SrFeO3-x layer was observed in initial state. A...

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2011-10, Vol.18 (9), p.092042-4
Main Authors: Kito, Shinya, Yokota, Takeshi, Tsuboi, Yasutoshi, Imura, Rempei, Gomi, Manabu
Format: Article
Language:English
Subjects:
Coupling
Electric fields
Electrodes
Exchange
High resistance
Joining
Low resistance
Magnetic properties
Magnetoresistance
Magnetoresistivity
Phase transformations
Random access memory
Stacking
Thin films
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Summary:We have investigated Fe electrode/SrFeO3-x stacking layer as resistance random access memory which is called next generation non-volatile memory. In this stacking system, positive magnetoresistance (MR) due to exchange coupling between Fe electrode and SrFeO3-x layer was observed in initial state. After applying external electric field, in the each resistance state which is high resistance state or low resistance state, MR behaviour was changed from positive MR to negative MR. This behaviour is more likely due to that exchange coupling and the phase of SrFeO3-x layer were changed by electric field and we realized that it is possible to control magnetic property and series of SrFeO3-x phase by using external electric field.
ISSN:1757-899X
1757-8981
1757-899X
DOI:10.1088/1757-899X/18/9/092042