Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs

We present backside laser testing of gallium nitride (GaN) power devices on Si substrate using optical parameters compatible with three-photon absorption in GaN and single-photon absorption in the substrate. The laser/device interaction is described. Two different kinds of transients are observed at...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2021-08, Vol.68 (8), p.1642-1650
Main Authors: Ngom, C., Pouget, V., Zerarka, M., Coccetti, F., Touboul, A., Matmat, M., Crepel, O., Jonathas, S., Bascoul, G.
Format: Article
Language:English
Subjects:
Absorption
Electronic devices
Electronics
Engineering Sciences
Gallium
Gallium nitride
Gallium nitride (GaN)
Gallium nitrides
HEMTs
laser testing
Lasers
MODFETs
Photon absorption
Photons
Silicon
Silicon substrates
Single Event Effects
single-event effects (SEEs)
Substrates
Testing
three-photon absorption (3PA)
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Summary:We present backside laser testing of gallium nitride (GaN) power devices on Si substrate using optical parameters compatible with three-photon absorption in GaN and single-photon absorption in the substrate. The laser/device interaction is described. Two different kinds of transients are observed at the gate electrode and analyzed. The technique allows identifying the sensitive regions of the devices and generating destructive events.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2021.3081485