Low Power Phase Change Memory using Silicon Carbide as a Heater Layer

The amorphous to crystalline transition of germanium-antimony-tellurium (GST) using two types heating element was investigated. With separate heater structure, simulation was done using COMSOL Multiphysic 5.0. Silicon carbide (SiC) and Titanium Sitride (TiSi3) has been selected as a heater and diffe...

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2015-11, Vol.99 (1), p.12003
Main Authors: Aziz, M S, Yin, Y, Hosaka, S, Mohammed, Z, Alip, R I
Format: Article
Language:English
Subjects:
Antimony
Boundaries
Electric potential
Germanium
Heaters
Heating equipment
Silicon carbide
Simulation
Tellurium
Titanium
Voltage
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Summary:The amorphous to crystalline transition of germanium-antimony-tellurium (GST) using two types heating element was investigated. With separate heater structure, simulation was done using COMSOL Multiphysic 5.0. Silicon carbide (SiC) and Titanium Sitride (TiSi3) has been selected as a heater and differences of them have been studied. The voltage boundary is 0.905V and temperature of the memory layer is 463K when using SIC as a heater. While the voltage boundary and temperature of memory layer when using TiSi3 are 1.103 V and 459K respectively. Based on the result of a simulation, the suitable material of heater layer for separate heater structure is Silicon carbide (SiC) compared with Titanium Sitride (TiSi3).
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/99/1/012003