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34.1: Invited Paper: Availability of a‐IGZO semiconductor TFT in the large size Gen. 11 facilities for competitive high‐end applications

We investigated the four‐phase amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in the world largest generation 11 factory (Gen.11, 2940mm × 3370mm) which has the cost advantage for future high‐end applications compared to generation 8.5 (Gen. 8.5, 2200mm × 2500mm). Self‐aligned coplanar stru...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2021-08, Vol.52 (S2), p.450-453
Main Authors: Seo, Hyun-Sik, Sun, Qianhui, Wu, Wei, Hsu, Yuan-Jun, Li, Shan, Cao, Weiran, Xiao, Jun Cheng, Wu, Yuan-Chun, Zhao, Bin, Zhang, Xin, Yan, Xiaolin
Format: Article
Language:English
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Summary:We investigated the four‐phase amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in the world largest generation 11 factory (Gen.11, 2940mm × 3370mm) which has the cost advantage for future high‐end applications compared to generation 8.5 (Gen. 8.5, 2200mm × 2500mm). Self‐aligned coplanar structure TFT has been developed for large size inkjet printing (IJP) OLED display, and 4 mask back channel etched (BCE) type TFT has been developed for large size 8K4K LCD applications. For the purpose of low cost, high‐end applications, the availability of large size oxide TFT is essential in Gen. 11.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.15157