Effects of Bi:V ratio and oxygen pressure on BiVO4(010) epitaxial thin film preparation

Bismuth vanadate (BiVO4) is a famous photocatalyst and photoanode material. The epitaxial thin film is very helpful to understand the origin of these properties. Here we reported that the preparation of BiVO4(010) epitaxial thin film from different targets by carefully controlling the oxygen pressur...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2021-10, Vol.618, p.413174, Article 413174
Main Authors: Shi, Yuxin, Zhai, Pengwei, Meng, Lixiang, Huang, Zongyin, Li, Guoqiang
Format: Article
Language:English
Subjects:
Band gap
Bismuth oxides
Bismuth vanadate (BiVO4)
Catalytic activity
Energy gap
Epitaxy
Oxygen
Oxygen pressure
Photocatalysis
Pulsed laser deposition
Thin films
Vanadates
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Summary:Bismuth vanadate (BiVO4) is a famous photocatalyst and photoanode material. The epitaxial thin film is very helpful to understand the origin of these properties. Here we reported that the preparation of BiVO4(010) epitaxial thin film from different targets by carefully controlling the oxygen pressure. The oxygen pressure shows an exponential change with the Bi:V ratio. The coverage has a maximum value at 5:1 of Bi:V ratio in the target. The optical band gap is the same for the samples obtained from the low oxygen pressures, while the band gap becomes smaller as increasing the oxygen pressure for the stoichiometric target. The photocatalytic activity rises first and then reaches a platform with the increase of Bi:V ratio.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2021.413174