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Time of Growth Dependent of ZnO-Nanorods by Self-Assembly Methods and its Structural Properties
ZnO-nanorods (ZnO-Nrs) have been successfully prepared on glass substrate using self-assembly method by varying deposition time. Zn acetate dehydrate and 2-methoxyethanol was used as raw material and solvent respectively (for ZnO seed layer preparation), meanwhile Zn nitrate hexahydrate and hexamety...
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Published in: | IOP conference series. Materials Science and Engineering 2017-05, Vol.196 (1), p.12046 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | ZnO-nanorods (ZnO-Nrs) have been successfully prepared on glass substrate using self-assembly method by varying deposition time. Zn acetate dehydrate and 2-methoxyethanol was used as raw material and solvent respectively (for ZnO seed layer preparation), meanwhile Zn nitrate hexahydrate and hexametylenetetramine (HMTA) dissolved in deionized water used as solution growth of ZnO-Nanorods (ZnO-Nrs). In this work, deposition times of ZnO-Nrs were varied by 120 min, 150 min, 180 min and 210 minutes at 100°C of annealing temperature. In order to investigate the physical properties of resulting ZnO, several measurements such as x-ray diffraction (XRD), ultra-violet visible spectroscopy and scanning electron microscopy (SEM) were carried out. Based on ZnO nanorods SEM image with varying time depositions, seems that increasing deposition time the nanorod size decrease but when the time reach 210 min, the average size of nanorods turned back increase. From XRD measurement, the average grain size and lattice constant (c) which is assemble the nanorod structure and lattice constant (c) was determined by Debye-Scherrer formula and Bragg law's respectively. The growth process of ZnO nanorod by 180 min time deposition was known as an appropriate time to produce ZnO nanorods with high crystal quality due to sharp peak intensity of XRD spectrum. |
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ISSN: | 1757-8981 1757-899X |
DOI: | 10.1088/1757-899X/196/1/012046 |