Plasma chemical silicon etching process

The cryogenic plasma chemical silicon etching process is developed, able to form the structured silicon layer with system of deep holes with high aspect ratio.

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2016-04, Vol.122 (1), p.12028-12031
Main Authors: Rudenko, K V, Miakonkih, A V, Rogojin, A E, Bogdanov, S V, Sidorov, V G, Kovalev, I V
Format: Article
Language:English
Subjects:
betavoltaic element
cryo process
Cryoforming
Etching
High aspect ratio
Materials science
p-i-n diode
scalloping
Silicon
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Description
Summary:The cryogenic plasma chemical silicon etching process is developed, able to form the structured silicon layer with system of deep holes with high aspect ratio.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/122/1/012028