High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory

We fabricated the HfZrO 2 (HZO) ferroelectric fin field-effect transistors (Fe-FinFET) with fin width of 60 nm and gate length of 100 nm for ferroelectric nonvolatile memory operations. The fabricated Fe-FinFET exhibited a large memory window (MW) of 1.5 V and high (100 ns) program/erase speeds at ±...

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Bibliographic Details
Published in:IEEE electron device letters 2021-09, Vol.42 (9), p.1307-1310
Main Authors: Yan, Siao-Cheng, Lan, Guan-Min, Sun, Chong-Jhe, Chen, Ya-Han, Wu, Chen-Han, Peng, Hao-Kai, Lin, Yu-Hsien, Wu, Yung-Hsien, Wu, Yung-Chun
Format: Article
Language:English
Subjects:
Degradation
Density
Electric fields
FeFET
FeFETs
Ferroelectric materials
Ferroelectric memory
Ferroelectricity
Field effect transistors
FinFET
FinFETs
hafnium zirconium oxide
Logic gates
Semiconductor devices
Silicon
Switches
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Summary:We fabricated the HfZrO 2 (HZO) ferroelectric fin field-effect transistors (Fe-FinFET) with fin width of 60 nm and gate length of 100 nm for ferroelectric nonvolatile memory operations. The fabricated Fe-FinFET exhibited a large memory window (MW) of 1.5 V and high (100 ns) program/erase speeds at ±5 V. After 10^{{5}} program/erase cycles, the MW was maintained at 1.09 V and the retention time was measured up to 10^{{4}} s with no degradation. The fabricated HZO Fe-FinFET is compatible with the current FinFET process and has a high MW, a fast program/erase speed, and excellent reliability. Therefore, the fabricated Fe-FinFET is a promising candidate for high-density ferroelectric field-effect transistor memory applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2021.3097777