Defect engineering of magnetic ground state in EuTiO3 epitaxial thin films

Atomistic defect engineering through the pulsed laser epitaxy of perovskite transition metal oxides offers facile control of their emergent opto‐electromagnetic and energy properties. Among the various perovskite oxides, EuTiO3 exhibits a strong coupling between the lattice, electronic, and magnetic...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2021-09, Vol.104 (9), p.4606-4613
Main Authors: Shin, Dongwon, Kim, Inseo, Song, Sehwan, Seo, Yu‐Seong, Hwang, Jungseek, Park, Sungkyun, Choi, Minseok, Choi, Woo Seok
Format: Article
Language:English
Subjects:
Antiferromagnetism
Density functional theory
Electronic structure
elemental defect
Engineering
Epitaxy
EuTiO3
Ferromagnetic materials
Ferromagnetic phases
ferromagnetism
Ground state
Lattice vacancies
Perovskites
Phase transitions
pulsed laser epitaxy
Pulsed lasers
Thin films
Titanium
Transition metal oxides
Unit cell
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Summary:Atomistic defect engineering through the pulsed laser epitaxy of perovskite transition metal oxides offers facile control of their emergent opto‐electromagnetic and energy properties. Among the various perovskite oxides, EuTiO3 exhibits a strong coupling between the lattice, electronic, and magnetic degrees of freedom, which is highly susceptible to atomistic defects. In this study, we investigated the magnetic phase of EuTiO3 epitaxial thin films via systematic defect engineering. A magnetic phase transition from an antiferromagnet to a ferromagnet was observed when the unit cell volume of EuTiO3 expanded due to the introduction of Eu–O vacancies. Optical spectroscopy and density functional theory calculations show that the change in the electronic structure as the ferromagnetic phase emerges can be attributed to the weakened Eu–Ti–Eu super‐exchange interaction and the introduction of the ferromagnetic Eu–O–Eu interaction. Facile defect engineering in EuTiO3 thin films facilitates understanding and tailoring of their magnetic ground state.
ISSN:0002-7820
1551-2916
DOI:10.1111/jace.17870