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Photoconductivity properties of silver-doped zinc oxide films
The transient photoconductivity of as-deposited and annealed in air 0.27 at.% silver-doped zinc oxide films (Ag:ZnO) coated on sapphire substrates by e -beam evaporation method was measured in the dark ( σ d ) and under light from a solar simulator ( σ ph ) at temperatures 8, 12, and 32 °C. In compa...
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Published in: | Applied physics. A, Materials science & processing Materials science & processing, 2021-09, Vol.127 (9), Article 727 |
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container_title | Applied physics. A, Materials science & processing |
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creator | Hovsepyan, R. Ayvazyan, O. Aghamalyan, N. Poghosyan, A. Petrosyan, S. Harutyunyan, V. Kafadaryan, Y. |
description | The transient photoconductivity of as-deposited and annealed in air 0.27 at.% silver-doped zinc oxide films (Ag:ZnO) coated on sapphire substrates by
e
-beam evaporation method was measured in the dark (
σ
d
) and under light from a solar simulator (
σ
ph
) at temperatures 8, 12, and 32 °C. In comparison with as-deposited Ag:ZnO film, the annealed film exhibits lower photoresponse which decreases and becomes slower as the temperature increases from 8 to 32 °C. The ln
σ
d
versus 1/
T
plots of the as-deposited and annealed samples revealed thermally-activated process in the range of 5–60 °C for
σ
d
with an activation energy of 1.4 eV and 0.8 eV, respectively. Furthermore,
σ
d
and
σ
ph
were measured in the frequency range of 10–35 × 10
6
s
−1
at room temperature.
σ
d
of the as-deposited film is frequency independent, while
σ
d
of the annealed film exhibits two different conduction mechanisms; one dominates in the low-frequency region as conduction via delocalized states, and the other is the polaron mechanism, which is activated at higher frequencies (
ω
> 190 × 10
3
s
−1
). The frequency dependences of
σ
ph
of the as-deposited and annealed films obey the Drude model of conductivity. |
doi_str_mv | 10.1007/s00339-021-04806-0 |
format | article |
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e
-beam evaporation method was measured in the dark (
σ
d
) and under light from a solar simulator (
σ
ph
) at temperatures 8, 12, and 32 °C. In comparison with as-deposited Ag:ZnO film, the annealed film exhibits lower photoresponse which decreases and becomes slower as the temperature increases from 8 to 32 °C. The ln
σ
d
versus 1/
T
plots of the as-deposited and annealed samples revealed thermally-activated process in the range of 5–60 °C for
σ
d
with an activation energy of 1.4 eV and 0.8 eV, respectively. Furthermore,
σ
d
and
σ
ph
were measured in the frequency range of 10–35 × 10
6
s
−1
at room temperature.
σ
d
of the as-deposited film is frequency independent, while
σ
d
of the annealed film exhibits two different conduction mechanisms; one dominates in the low-frequency region as conduction via delocalized states, and the other is the polaron mechanism, which is activated at higher frequencies (
ω
> 190 × 10
3
s
−1
). The frequency dependences of
σ
ph
of the as-deposited and annealed films obey the Drude model of conductivity.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-021-04806-0</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Annealing ; Applied physics ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Electron beams ; Frequency ranges ; Machines ; Manufacturing ; Materials science ; Nanotechnology ; Optical and Electronic Materials ; Oxide coatings ; Physics ; Physics and Astronomy ; Processes ; Room temperature ; Sapphire ; Silver ; Substrates ; Surfaces and Interfaces ; Thin Films ; Transient photoconductivity ; Zinc oxide ; Zinc oxides</subject><ispartof>Applied physics. A, Materials science & processing, 2021-09, Vol.127 (9), Article 727</ispartof><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-fd1f49c4d7e4d57088a4a1391f1c24590991d175583a77d2b5b50e41667c8f343</citedby><cites>FETCH-LOGICAL-c319t-fd1f49c4d7e4d57088a4a1391f1c24590991d175583a77d2b5b50e41667c8f343</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Hovsepyan, R.</creatorcontrib><creatorcontrib>Ayvazyan, O.</creatorcontrib><creatorcontrib>Aghamalyan, N.</creatorcontrib><creatorcontrib>Poghosyan, A.</creatorcontrib><creatorcontrib>Petrosyan, S.</creatorcontrib><creatorcontrib>Harutyunyan, V.</creatorcontrib><creatorcontrib>Kafadaryan, Y.</creatorcontrib><title>Photoconductivity properties of silver-doped zinc oxide films</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>The transient photoconductivity of as-deposited and annealed in air 0.27 at.% silver-doped zinc oxide films (Ag:ZnO) coated on sapphire substrates by
e
-beam evaporation method was measured in the dark (
σ
d
) and under light from a solar simulator (
σ
ph
) at temperatures 8, 12, and 32 °C. In comparison with as-deposited Ag:ZnO film, the annealed film exhibits lower photoresponse which decreases and becomes slower as the temperature increases from 8 to 32 °C. The ln
σ
d
versus 1/
T
plots of the as-deposited and annealed samples revealed thermally-activated process in the range of 5–60 °C for
σ
d
with an activation energy of 1.4 eV and 0.8 eV, respectively. Furthermore,
σ
d
and
σ
ph
were measured in the frequency range of 10–35 × 10
6
s
−1
at room temperature.
σ
d
of the as-deposited film is frequency independent, while
σ
d
of the annealed film exhibits two different conduction mechanisms; one dominates in the low-frequency region as conduction via delocalized states, and the other is the polaron mechanism, which is activated at higher frequencies (
ω
> 190 × 10
3
s
−1
). The frequency dependences of
σ
ph
of the as-deposited and annealed films obey the Drude model of conductivity.</description><subject>Annealing</subject><subject>Applied physics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Electron beams</subject><subject>Frequency ranges</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Oxide coatings</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Room temperature</subject><subject>Sapphire</subject><subject>Silver</subject><subject>Substrates</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><subject>Transient photoconductivity</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEUhYMoWKt_wNWA6-jNa5IsXEjxBQVd6DpM89CUdlKTaVF_vdER3Hk3Fy7nnHv4EDolcE4A5EUBYExjoAQDV9Bi2EMTwhnF0DLYRxPQXGLFdHuIjkpZQh1O6QRdPr6mIdnUu60d4i4OH80mp43PQ_SlSaEpcbXzGbt6c81n7G2T3qPzTYirdTlGB6FbFX_yu6fo-eb6aXaH5w-397OrObaM6AEHRwLXljvpuRMSlOp4R5gmgVjKhQatiSNSCMU6KR1diIUAz0nbSqsC42yKzsbc2u1t68tglmmb-_rSUNGqSoArUVV0VNmcSsk-mE2O6y5_GALmG5MZMZmKyfxgMlBNbDSVKu5ffP6L_sf1BZMlaaQ</recordid><startdate>20210901</startdate><enddate>20210901</enddate><creator>Hovsepyan, R.</creator><creator>Ayvazyan, O.</creator><creator>Aghamalyan, N.</creator><creator>Poghosyan, A.</creator><creator>Petrosyan, S.</creator><creator>Harutyunyan, V.</creator><creator>Kafadaryan, Y.</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20210901</creationdate><title>Photoconductivity properties of silver-doped zinc oxide films</title><author>Hovsepyan, R. ; Ayvazyan, O. ; Aghamalyan, N. ; Poghosyan, A. ; Petrosyan, S. ; Harutyunyan, V. ; Kafadaryan, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-fd1f49c4d7e4d57088a4a1391f1c24590991d175583a77d2b5b50e41667c8f343</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Annealing</topic><topic>Applied physics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Electron beams</topic><topic>Frequency ranges</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Oxide coatings</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Room temperature</topic><topic>Sapphire</topic><topic>Silver</topic><topic>Substrates</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><topic>Transient photoconductivity</topic><topic>Zinc oxide</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hovsepyan, R.</creatorcontrib><creatorcontrib>Ayvazyan, O.</creatorcontrib><creatorcontrib>Aghamalyan, N.</creatorcontrib><creatorcontrib>Poghosyan, A.</creatorcontrib><creatorcontrib>Petrosyan, S.</creatorcontrib><creatorcontrib>Harutyunyan, V.</creatorcontrib><creatorcontrib>Kafadaryan, Y.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hovsepyan, R.</au><au>Ayvazyan, O.</au><au>Aghamalyan, N.</au><au>Poghosyan, A.</au><au>Petrosyan, S.</au><au>Harutyunyan, V.</au><au>Kafadaryan, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoconductivity properties of silver-doped zinc oxide films</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2021-09-01</date><risdate>2021</risdate><volume>127</volume><issue>9</issue><artnum>727</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>The transient photoconductivity of as-deposited and annealed in air 0.27 at.% silver-doped zinc oxide films (Ag:ZnO) coated on sapphire substrates by
e
-beam evaporation method was measured in the dark (
σ
d
) and under light from a solar simulator (
σ
ph
) at temperatures 8, 12, and 32 °C. In comparison with as-deposited Ag:ZnO film, the annealed film exhibits lower photoresponse which decreases and becomes slower as the temperature increases from 8 to 32 °C. The ln
σ
d
versus 1/
T
plots of the as-deposited and annealed samples revealed thermally-activated process in the range of 5–60 °C for
σ
d
with an activation energy of 1.4 eV and 0.8 eV, respectively. Furthermore,
σ
d
and
σ
ph
were measured in the frequency range of 10–35 × 10
6
s
−1
at room temperature.
σ
d
of the as-deposited film is frequency independent, while
σ
d
of the annealed film exhibits two different conduction mechanisms; one dominates in the low-frequency region as conduction via delocalized states, and the other is the polaron mechanism, which is activated at higher frequencies (
ω
> 190 × 10
3
s
−1
). The frequency dependences of
σ
ph
of the as-deposited and annealed films obey the Drude model of conductivity.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-021-04806-0</doi></addata></record> |
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subjects | Annealing Applied physics Characterization and Evaluation of Materials Condensed Matter Physics Electron beams Frequency ranges Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Oxide coatings Physics Physics and Astronomy Processes Room temperature Sapphire Silver Substrates Surfaces and Interfaces Thin Films Transient photoconductivity Zinc oxide Zinc oxides |
title | Photoconductivity properties of silver-doped zinc oxide films |
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