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Exfoliated and evaporated thin films of graphitic carbon nitride (g-C3N4): Evolution of photoelectronic properties from bulk
Photoelectronic properties of polymeric graphitic carbon nitride (g-C3N4) are not well understood, especially in its different structural forms. We study the evolution of optical properties of three forms viz. bulk, chemically exfoliated layers and thin films. The optical bandgap of bulk g-C3N4 is 2...
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Published in: | Materials letters 2021-11, Vol.302, p.130374, Article 130374 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Photoelectronic properties of polymeric graphitic carbon nitride (g-C3N4) are not well understood, especially in its different structural forms. We study the evolution of optical properties of three forms viz. bulk, chemically exfoliated layers and thin films. The optical bandgap of bulk g-C3N4 is 2.85 eV, and it increases for exfoliated samples. Photoluminescence (PL) is studied in detail by carefully analyzing the line spectra for all three forms. In all cases, the high intensity peak is excitonic in nature, with two other peaks attributed to its phonon replicas. Time resolved photoluminescence (TRPL) spectroscopy shows a double exponential decay irrespective of the different forms of g-C3N4. |
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ISSN: | 0167-577X 1873-4979 |
DOI: | 10.1016/j.matlet.2021.130374 |