Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

Calculational analysis of different scattering mechanisms of two-dimensional electron gas in AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN high-electron mobility transistors was carried out. It was found that the mobility of AlGaN-based structures at room temperature is mainly limited by inherent scattering m...

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Bibliographic Details
Published in:Journal of physics. Conference series 2019-11, Vol.1400 (7), p.77009
Main Authors: Arteev, D S, Sakharov, A V, Lundin, W V, Zakheim, D A, Zavarin, E E, Tsatsulnikov, A F
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Aluminum nitride
Carrier mobility
Electron gas
Electron mobility
Gallium nitrides
Heterostructures
Interface roughness
Low temperature
Mathematical analysis
Physics
Room temperature
Scattering
Transistors
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Summary:Calculational analysis of different scattering mechanisms of two-dimensional electron gas in AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN high-electron mobility transistors was carried out. It was found that the mobility of AlGaN-based structures at room temperature is mainly limited by inherent scattering mechanisms (namely, optical and acoustic phonon scattering), while the mobility in our InAlN-based structures is limited by the interface roughness scattering. The low-temperature mobility is found to be limited by the interface roughness scattering for both AlGaN- and InAlN-based structures.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1400/7/077009